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UM4306SM

产品描述Pin Diode, 600V V(BR), Silicon,
产品类别分立半导体    二极管   
文件大小393KB,共14页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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UM4306SM概述

Pin Diode, 600V V(BR), Silicon,

UM4306SM规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Microsemi
包装说明O-XELF-R2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW DISTORTION
应用ATTENUATOR
最小击穿电压600 V
外壳连接ISOLATED
配置SINGLE
最大二极管电容2.2 pF
标称二极管电容2.2 pF
二极管元件材料SILICON
最大二极管正向电阻1.5 Ω
二极管电阻测试电流100 mA
二极管电阻测试频率100 MHz
二极管类型PIN DIODE
频带HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码O-XELF-R2
少数载流子标称寿命6 µs
元件数量1
端子数量2
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散15 W
认证状态Not Qualified
反向测试电压100 V
表面贴装YES
技术POSITIVE-INTRINSIC-NEGATIVE
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
UM4300 / UM7300
FOR ATTENUATOR APPLICATIONS
O
S
DESCRIPTION
The UM4300 and UM7300 series combine
a diode chip of extremely thick intrinsic
region with a low thermal resistance
construction. This results in diodes uniquely
applicable to very low distortion linear
attenuators and specialized functions. The
UM4300 series, with large cross-sectional
chip area offers the highest power
capability, of the two series. The UM7300
series offers lower capacitance.
Both diode series are intended for use in linear
attenuators operating from HF to beyond 1 GHz.
Low distortion is a result of transit time
frequencies below 5 MHz.
Operated as RF switches, either diode series can
be operated at low dc reverse bias voltages, to
hold off much higher RF voltage levels.
KEY FEATURES
WWW .
Microsemi
.C
OM
Extremely low distortion performance
Useful frequency range extends
below 500 kHz
Power dissipation to 20 W (UM4300)
Capacitance as low as 0.7 pF
(UM7300)
Voltage ratings to 1000V
Non cavity design
Thermally matched configuration
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
B&E
C
D
SM
All
Condition
O
25 C Pin Temperature
UM4300
θ
P
D
20 W 7.5
o
C/W
10 W 15
o
C/W
2.5 W
20 W 7.5
o
C/W
15 W 10 C/W
15 W 20
o
C/W
500 kW
o
UM7300
P
D
θ
7.5 W
4W
7.5 W
6W
20
O
C/W
37.5
O
C/W
20
O
C/W
25 C/W
O
Compatible with automatic insertion
equipment
½ in. total length to 25
O
C Contact
Free Air
O
25 C Stud Temperature
25 C Stud Temperature
O
25 C End Cap Temperature
O
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX4301SM, etc.
5.5 W 18
O
C/W
100 kW
1 us pulse (Single)
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
600
800
1000
UM4301
UM4302
-
UM4306
-
UM4310
UM7301
UM7302
UM7306
UM7310
UM4300 SERIES
UM4300 SERIES
Style “B”
Style “SM”
Copyright
2005
Rev. 0, 2006-04-27
Microsemi
Page 1

UM4306SM相似产品对比

UM4306SM UM4302SM UM4310SM UM7302SM UM7310SM UM4301SM UM7301SM
描述 Pin Diode, 600V V(BR), Silicon, Pin Diode, 200V V(BR), Silicon, Pin Diode, 1000V V(BR), Silicon, Pin Diode, 200V V(BR), Silicon, Pin Diode, 1000V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon,
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code compliant compliant compliant compliant compliant compliant compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION LOW DISTORTION
应用 ATTENUATOR ATTENUATOR ATTENUATOR ATTENUATOR ATTENUATOR ATTENUATOR ATTENUATOR
最小击穿电压 600 V 200 V 1000 V 200 V 1000 V 100 V 100 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最大二极管电容 2.2 pF 2.2 pF 2.2 pF 0.7 pF 0.7 pF 2.2 pF 0.7 pF
标称二极管电容 2.2 pF 2.2 pF 2.2 pF 0.7 pF 0.7 pF 2.2 pF 0.7 pF
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
最大二极管正向电阻 1.5 Ω 1.5 Ω 1.5 Ω 3 Ω 3 Ω 1.5 Ω 3 Ω
二极管电阻测试电流 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
二极管电阻测试频率 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
二极管类型 PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
频带 HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码 O-XELF-R2 O-XELF-R2 O-XELF-R2 O-XELF-R2 O-XELF-R2 O-XELF-R2 O-XELF-R2
少数载流子标称寿命 6 µs 6 µs 6 µs 4 µs 4 µs 6 µs 4 µs
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大功率耗散 15 W 15 W 15 W 5.5 W 5.5 W 15 W 5.5 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
反向测试电压 100 V 100 V 100 V 100 V 100 V 100 V 100 V
表面贴装 YES YES YES YES YES YES YES
技术 POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
端子形式 WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
端子位置 END END END END END END END
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
是否无铅 含铅 含铅 含铅 含铅 - 含铅 含铅

 
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