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S4JHR7G

产品描述Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
产品类别分立半导体    二极管   
文件大小354KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

S4JHR7G概述

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

S4JHR7G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明SMC, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.15 V
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
参考标准AEC-Q101
最大重复峰值反向电压600 V
最大反向电流10 µA
最大反向恢复时间1.5 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
S4A - S4M
Taiwan Semiconductor
CREAT BY ART
4A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
DO-214AB (SMC)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 4 A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
S4A
50
35
50
S4B
100
70
100
S4D
200
140
200
S4G
400
280
400
4
100
1.15
10
250
1.5
60
13
47
- 55 to +150
- 55 to +150
S4J
600
420
600
S4K S4M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410019
Version: H15

 
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