CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.5A, R
DS(ON)
= 30mΩ @V
GS
= 4.5V.
R
DS(ON)
= 40mΩ @V
GS
= 2.5V.
Super High dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G
2
S
2
S
2
D
PRELIMINARY
D
S
1
S
1
G
1
1
2
3
4
8 D
7 S
2
6 S
2
5 G
2
G
1
S
1
S
1
D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
20
Units
V
V
A
A
W
C
±
10
4.5
25
1.0
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
125
Units
C/W
2004.December
8 - 14
http://www.cetsemi.com
CEG8205
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
d
c
T
A
= 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 1.7A
V
DS
= 10V, I
D
= 4.5A,
V
GS
= 4.5V
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
GEN
= 6Ω
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
GS
= -10V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 4.5A
V
GS
= 2.5V, I
D
= 3.5A
V
DS
= 10V, I
D
= 4.5A
0.5
24
32
10
500
300
140
20
18
60
28
10
2.3
2.9
1.7
1.2
40
40
108
56
15
Min
20
1
100
-100
1.0
30
40
Typ
Max
Units
V
µA
nA
nA
V
mΩ
mΩ
S
Gate Threshold Voltage
8
V
DS
= 8V, V
GS
= 0V,
f = 1.0 MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8 - 15
CEG8205
10
V
GS
=4.5,3.5,2.5V
V
GS
=2.0V
30
25 C
I
D
, Drain Current (A)
6
I
D
, Drain Current (A)
V
GS
=1.5V
8
24
18
4
12
2
6
T
J
=125 C
0
-55 C
2
2.0
3
0
0
1
2
3
0
1
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
600
450
300
150
0
0
2
4
6
8
10
Coss
Crss
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Ciss
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=4.5
V
GS
=4.5V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
1
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
I
S
, Source-drain current (A)
25
50
75
100
125
150
10
10
0
10
-25
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
8 - 16
CEG8205
V
GS
, Gate to Source Voltage (V)
5 V =10V
DS
I
D
=4.5A
10
2
I
D
, Drain Current (A)
4
R
DS(ON)
Limit
10
1
3
10
0
1ms
10ms
100ms
1s
DC
2
1
10
-1
0
0
3
6
9
12
10
-2
T
A
=25 C
T
J
=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
8
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective
Transient Thermal Impedance
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
θJA
(t)=r (t) * R
θJA
2. R
θJA
=See Datasheet
3. T
JM-
T
A
= P* R
θJA
(t)
4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
8 - 17
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