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SGL40N150D
IGBT
SGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(IGBT)
provides low conduction and switching losses.
The SGL40N150D is designed for induction heating
applications.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 3.7 V @ I
C
= 40A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGL40N150D
1500
±
25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.625
0.83
25
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL40N150D Rev. A1
SGL40N150D
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1500
--
--
--
--
--
--
250
± 100
V
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 40mA, V
CE
= V
GE
I
C
= 40A
,
V
GE
= 15V
3.5
--
5.0
3.7
7.5
4.7
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
4000
700
300
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600V, I
C
= 40A,
R
G
= 51Ω, V
GE
= 15V,
Resistive Load, T
C
= 25°C
V
CE
= 600V, I
C
= 40A,
V
GE
= 15V
--
--
--
--
--
--
--
90
230
245
230
140
25
45
200
700
400
400
170
25
60
ns
ns
ns
ns
nC
nC
nC
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
C
= 25°C unless otherwise noted
Test Conditions
I
F
= 10A
I
F
= 10A, di/dt = 200A/us
Min.
--
--
Typ.
1.3
170
Max.
1.8
300
Units
V
ns
©2002 Fairchild Semiconductor Corporation
SGL40N150D Rev. A1
SGL40N150D
100
Common Emitter
80
T
C
= 25 C
o
120
20V
10V
100
Common Emitter
V
GE
= 15V
T
C
= 25 C
T
C
= 125 C
o
o
Collector Current, I
C
[A]
8
Collector Current, I
C
[A]
15V
12V
80
60
V
GE
= 8V
60
40
40
20
20
0
0
2
4
6
0
0
2
4
6
8
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V [V]
CE
5
I
C
= 80A
6000
Common Emitter
V
GE
=0V, f=1MHz
T
C
=25 C
C
ies
o
5000
4
I
C
= 40A
3
I
C
= 20A
2
Capacitance [pF]
4000
3000
2000
C
oes
C
res
1000
1
25
50
75
100
o
0
125
1
10
Case Temperature, T
C
[ C]
Collector - Emitter Voltage, V
CE
[V]
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
20
Common Emitter
T
C
= 25 C
16
o
20
Common Emitter
T
C
= 125 C
16
0
Collector - Emitter Voltage, V
CE
[V]
12
Collector - Emitter Voltage, V
CE
[V]
12
8
80A
40A
4
20A
8
80A
40A
4
20A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGL40N150D Rev. A1
SGL40N150D
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
T
C
= 125 C
o
o
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
T
C
= 125 C
o
o
Switching Time [ns]
Switching Time [ns]
td(on)
tf
td(off)
100
tr
tf
100
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
90
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 7. Turn-Off Characteristics vs.
Collector Current
Fig 8. Turn-On Characteristics vs.
Collector Current
Common Emitter
V
G E
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
10000
T
C
= 125 C
o
o
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
o
Switching Loss [
µ
J]
Switching Time [ns]
T
C
= 125 C
tf
Eoff
1000
Eoff
Eon
tf
td(off)
100
100
10
20
30
40
50
60
70
80
90
10
100
Collector Current, I
C
[A]
Gate Resistance, R
G
[
Ω
]
Fig 9. Switching Loss vs. Collector Current
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
10000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
o
Switching Time [ns]
Switching Loss [
µ
J]
T
C
= 125 C
o
T
C
= 125 C
Eoff
tr
100
td(on)
Eoff
Eon
1000
Eon
10
10
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
Fig 12. Switching Loss vs. Gate Resistance
SGL40N150D Rev. A1
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