with PLL, based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM76V8S755HGT8 Series
DESCRIPTION
Preliminary
The Hyundai HYM76V8S755AT8 Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine
8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. One 0.22uF and two 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hyundai HYM76V8S755AT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes
memory. The Hyundai HYM76V8S755AT8 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
•
•
•
•
PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.50” (38.10mm) Height PCB with double sided
components
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
•
•
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
•
Programmable CAS Latency ; 2, 3 Clocks
•
•
•
•
•
•
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM76V8S755AT8-8
HYM76V8S755AT8-P
HYM76V8S755AT8-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
4 Banks
4K
Normal
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.0/May 2000
Preliminary
PC100 SDRAM Registered DIMM
HYM76V8S755HGT8 Series
PIN DESCRIPTION
PIN
CK0~CK3
CKE0
/S0, /S2
BA0, BA1
A0 ~ A11
/RAS, /CAS, /WE
REGE
DQM0~DQM7
DQ0 ~ DQ63
CB0 ~ CB7
VCC
V
SS
SCL
SDA
SA0~2
WP
NC
PIN NAME
Clock Inputs
Clock Enable
Chip Select
SDRAM Bank Address
Address
Row Address Strobe, Column
Address Strobe, Write Enable
Register Enable
Data Input/Output Mask
Data Input/Output
Check Bit Input/Output
Power Supply (3.3V)
Ground
SPD Clock Input
SPD Data Input/Output
SPD Address Input
Write Protect for SPD
No Connection
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CK, CKE and DQM
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
德国硅晶圆大厂Siltronic AG 4月25日公布2018年第1季(截至3月31日为止)财报：营收年增26.9%(季减0.2%)至3.274亿欧元；毛利率自1年前的23.0%升至38.1%；EBITDA(税前、息前、折旧摊提前盈余)年增131%至1.223亿欧元；EBITDA率报37.4%、优于一年前的20.5%以及2017年第4季的36.8%。 Siltronic指出，2017年第1季...[详细]
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
