Power Transistor Arrays
PUB4122
(PU4122)
, PUB4422
(PU4422)
Silicon NPN triple diffusion planar type darlington
For power amplification
■
Features
•
Built-in zener diode (30 V) between collector and base
•
Small variation in withstand pressure
•
Large energy handling capability E
s/b
•
High-speed switching
•
PUB4122 (PU4122): NPN 4 elements
PUB4422 (PU4422): NPN 2 elements
×
2
25.3
±0.2
Unit: mm
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
9.5
±0.2
8.0
±0.2
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.8
±0.25
0.5
±0.15
1.0
±0.25
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
/D
h
FE2 *1
ce
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
f
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*2
t
stg
E
s/b
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00065AED
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2.54
±0.2
0.5
±0.15
Rating
30±5
30±5
5
4
8
Unit
V
V
V
A
A
C 1.5
±0.5
15
W
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
9
×
2.54 = 22.86
±0.25
3.5
150
°C
°C
−55
to
+150
Conditions
Min
25
Typ
Max
35
Unit
V
µA
V
I
C
=
5 mA, I
B
=
0
ue
V
CB
=
25 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
100
2
tin
mA
on
isc
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
I
C
=
3 A, I
B
=
12 mA
I
C
=
3 A
1 000
1 000
10 000
2.0
4.0
2.5
Ma
int
en
an
V
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
B1
=
12 mA, I
B2
= −12
mA
V
CC
=
20 V
20
MHz
µs
µs
µs
0.3
3.0
1.0
I
C
=
2 A, L
=
100 mH, R
BE
=
100
Ω
200
mJ
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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on
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