1N6843CCU3
100 Volt, 10 Amp Dual Schottky
Common Cathode Center Tap Rectifier
Qualified per MIL-PRF-19500/681
DESCRIPTION
This low-profile 1N6843CCU3 Schottky rectifier device is military qualified up to a JANTXV
level for high-reliability applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N6842.
Low profile ceramic SMD.
Ultrasonic aluminum wire bonds.
JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/681.
RoHS compliant by design.
U3 (SMD-0.5)
Package
APPLICATIONS / BENEFITS
•
•
•
•
•
High surge rating.
Low reverse leakage current.
Low forward voltage.
Seam welded package.
Low capacitance.
MAXIMUM RATINGS
@ T
C
= +25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Symbol
T
J
and T
STG
R
ӨJC
R
ӨJA
V
RWM
I
O
I
FSM
Value
-65 to +150
3.5
1.75
40
100
15
100
Unit
o
C
o
C/W
o
o
on each leg
entire package
Thermal Resistance Junction-to-Ambient each leg
Working Peak Reverse Voltage
Average Rectified Output Current per leg
(see
Figure 1)
Non-Repetitive Sinusoidal Surge Current @ t
p
= 8.3 ms
C/W
V
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0130, Rev. 2 (6/14/13)
©2013 Microsemi Corporation
Page 1 of 6
1N6843CCU3
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic and gold over nickel plated steel.
TERMINALS: Gold over nickel plated tungsten/copper.
MARKING: Part number, date code, A = anode.
POLARITY: See
schematic
on last page.
WEIGHT: Approximately 0.9 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
1N6843
CC
U3
SMD-0.5 Surface Mount
Common Cathode Polarity
Symbol
C
J
I
F
I
R
T
J
V
F
V
R
SYMBOLS & DEFINITIONS
Definition
Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1MHz) and specified voltage.
Forward Current: The forward current dc value, no alternating component.
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Junction Temperature: The temperature of a semiconductor junction.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
T4-LDS-0130, Rev. 2 (6/14/13)
©2013 Microsemi Corporation
Page 2 of 6
1N6843CCU3
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 C unless otherwise noted
Parameters / Test Conditions
CHARACTERISTICS per Leg
Forward Voltage*
I
F
= 5 A, 300
µs
Pulse
I
F
= 15 A, 300
µs
Pulse
I
F
= 30 A, 300
µs
Pulse
I
F
= 5 A, T
C
= +125 °C, 300
µs
Pulse
I
F
= 15 A, T
C
= +125 °C, 300
µs
Pulse
I
F
= 30 A, T
C
= +125 ºC, 300
µs
Pulse
I
F
= 5 A, T
C
= - 55 °C, 300
µs
Pulse
I
F
= 15 A, T
C
= - 55 °C, 300
µs
Pulse
I
F
= 30 A, T
C
= - 55 ºC, 300
µs
Pulse
Reverse Current
V
R
= 100 V
V
R
= 100 V, T
C
= +125 °C
Junction Capacitance
V
R
= 5 V
f = 1 MHz
V
SIG
= 50 mV (p-p)
* Pulse test: Pulse width 300 µsec, duty cycle 2%.
0.77
1.03
1.27
0.60
0.77
0.95
0.86
1.18
1.43
0.010
5.0
275
Symbol
Min.
Max.
Unit
o
V
F
V
I
R
mA
C
J
pF
T4-LDS-0130, Rev. 2 (6/14/13)
©2013 Microsemi Corporation
Page 3 of 6
1N6843CCU3
GRAPHS
Average Rectified Output Current
I
O
Rating (A)
T
C
(°C) (CASE)
FIGURE 1
Temperature-current derating curve (for each leg)
NOTES:
1. All devices are capable of operating at ≤ T
J
specified on this curve. Any parallel line to this curve will intersect the
appropriate current for the desired maximum T
J
allowed.
2. Derate design curve constrained by the maximum junction temperature (T
J
≤ 150 °C) and current rating specified.
(See
Maximum Ratings.)
3. Derate design curve chosen at T
J
≤ 125 °C, where the maximum temperature of electrical test is performed.
4. Derate design curves chosen at T
J
≤, 125 °C, and 110 °C to show current rating where most users want to limit T
J
in
their application.
T4-LDS-0130, Rev. 2 (6/14/13)
©2013 Microsemi Corporation
Page 4 of 6
1N6843CCU3
GRAPHS
(continued)
Thermal impedance – Z
ӨJC
(°C/W)
t1, Rectangular Pulse Duration (Sec)
FIGURE 2
Thermal impedance (for each leg)
T4-LDS-0130, Rev. 2 (6/14/13)
©2013 Microsemi Corporation
Page 5 of 6
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