BFX89
BFY90
WIDE BAND VHF/UHF AMPLIFIER
•
•
•
SILICON PLANAR EPITAXIAL TRANSISTORS
TO-72 METAL CASE
VERY LOW NOISE
APPLICATIONS :
•
TELECOMMUNICATIONS
•
WIDE BAND UHF AMPLIFIER
•
RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide
band common-emitter linear amplifiers up to 1 GHz. They feature very high f
T
, low
reverse capacitance, excellent cross modulation properties and very low noise
performance. The BFY90 is complementary to the BFR99A. Typical applications
include telecommunication and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CER
V
CBO
V
EBO
I
C
I
CM
Ptot
Tstg,
Tj
Ratings
Collector-Emitter Voltage ( I
B = 0
)
Collector-Emitter Voltage ( R
BE
≤50Ω
)
Collector-Base Voltage ( I
E
= 0)
Collector-Base Voltage ( I
C
= 0)
Collector Current
Collector Peak Current
Total Power Dissipation at Tamb
≤
25
°C
Storage and Junction Temperature
Value
15
30
30
2.5
25
50
200
-65 to 200
Unit
V
V
V
V
mA
mA
mW
°C
COMSET SEMICONDUCTORS
1/4
BFX89
BFY90
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
R
thJ-
Ratings
Thermal Resistance, Junction – Case
Thermal Resistance, Junction – ambient
Max
Max
Value
580
880
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Tamb = 25
°C unless otherwise specified
Symbol
I
CBO
V
CEK
*
Ratings
Collector Cutoff Current
(I
E
=0)
Collector-emitter Knee
Voltage
Test Condition(s)
Min Typ
-
-
-
-
1
1.1
1.2
1.4
-
-
-
-
-
-
0.6
0.6
Mx Unit
10
0.75
-
-
GHz
-
-
150
150
-
125
125
1.7
pF
1.5
-
pF
0.8
nA
V
V
CB
= 15V
I
C
= 20mA
V
CE
= 5V
f = 500MHZ
I
C
=2 mA
V
CE
= 5V
f = 500MHZ
I
C
=25 mA
I
C
= 2mA
V
CE
= 1 V
BFX89
BFY90
BFX89
BFY90
BFX89
BFY90
-
1
-
1.3
20
25
20
25
-
-
-
-
f
T
Transition Frequency
h
FE
DC Current Gain
I
C
= 25mA
V
CE
= 1 V
I
E
=0
V
CB
= 10V
Collector-base Capacitance
f= 1MHZ
V
CE
= 5
Reverse Capacitance
I
C
= 2mAV
f = 1MHZ
BFX89
BFY90
BFX89
BFY90
BFX89
BFY90
C
CBO
(1)
Cre(2)
COMSET SEMICONDUCTORS
2/4
ARM技术
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