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GS8342TT37BGD-450T

产品描述DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
产品类别存储    存储   
文件大小548KB,共30页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
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GS8342TT37BGD-450T概述

DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8342TT37BGD-450T规格参数

参数名称属性值
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE, LATE WRITE
最大时钟频率 (fCLK)450 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
长度15 mm
内存密度37748736 bit
内存集成电路类型DDR SRAM
内存宽度36
功能数量1
端子数量165
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织1MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最小待机电流1.7 V
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度13 mm
Base Number Matches1

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GS8342TT07/10/19/37BD-450/400/350/333/300
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.0 Clock Latency
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
36Mb SigmaDDR-II+
TM
Burst of 2 SRAM
450 MHz–300 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
Bottom View
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
SigmaDDR™ Family Overview
The GS8342TT07/10/19/37BD are built in compliance with
the SigmaDDR-II+ SRAM pinout standard for Common I/O
synchronous SRAMs. They are 37,748,736 (36Mb) SRAMs.
The GS8342TT07/10/19/37BD SigmaDDR-II+ SRAMs are
just one element in a family of low power, low voltage HSTL
I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8342TT07/10/19/37BD SigmaDDR-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Because Common I/O SigmaDDR-II+ RAMs always transfer
data in two packets, A0 is internally set to 0 for the first read
or write transfer, and automatically incremented by 1 for the
next transfer. Because the LSB is tied off internally, the
address field of a SigmaDDR-II+ B2 RAM is always one
address pin less than the advertised index depth force return
(e.g., the 2M x 18 has a 1M addressable index).
Parameter Synopsis
-450
tKHKH
tKHQV
2.22 ns
0.45 ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
Rev: 1.01 6/2012
1/30
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 
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