Bus Driver/Transceiver, 1-Func, 10-Bit, True Output, CMOS, CQCC28
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| 控制类型 | INDEPENDENT CONTROL |
| 计数方向 | BIDIRECTIONAL |
| JESD-30 代码 | S-XQCC-N28 |
| JESD-609代码 | e0 |
| 最大I（ol） | 0.032 A |
| 位数 | 10 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC |
| 封装代码 | QCCN |
| 封装等效代码 | LCC28,.45SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 9 ns |
| 认证状态 | Not Qualified |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 6 |
| 翻译 | N/A |
| Base Number Matches | 1 |
| 54FCT861BL | 5962-01-389-7075 | 5962-01-332-3044 | IDT74FCT861APQ | 54FCT863BDB | 54FCT861BDB | 54FCT861ADB | 54FCT861BLB | IDT74FCT861BPQ | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Bus Driver/Transceiver, 1-Func, 10-Bit, True Output, CMOS, CQCC28 | Bus Driver/Transceiver, 1-Func, 10-Bit, True Output, CMOS, CDIP24 | Bus Driver/Transceiver, 1-Func, 9-Bit, True Output, CMOS, CDIP24 | Bus Driver/Transceiver, 1-Func, 10-Bit, True Output, CMOS, PDIP24 | CDIP-24, Tube | CDIP-24, Tube | CDIP-24, Tube | LCC-28, Tube | Bus Driver/Transceiver, 1-Func, 10-Bit, True Output, CMOS, PDIP24 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | _compli | _compli | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 控制类型 | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL | INDEPENDENT CONTROL |
| 计数方向 | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL | BIDIRECTIONAL |
| JESD-30 代码 | S-XQCC-N28 | R-XDIP-T24 | R-XDIP-T24 | R-PDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | S-CQCC-N28 | R-PDIP-T24 |
| 最大I（ol） | 0.032 A | 0.032 A | 0.032 A | 0.048 A | 0.032 A | 0.032 A | 0.032 A | 0.032 A | 0.048 A |
| 位数 | 10 | 10 | 9 | 10 | 9 | 10 | 10 | 10 | 10 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 24 | 24 | 24 | 24 | 24 | 24 | 28 | 24 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 70 °C | 125 °C | 125 °C | 125 °C | 125 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | - |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
| 封装代码 | QCCN | DIP | DIP | DIP | DIP | DIP | DIP | QCCN | DIP |
| 封装等效代码 | LCC28,.45SQ | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | LCC28,.45SQ | DIP24,.3 |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 240 | 240 | 240 | 260 | 260 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | NO | NO | NO | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL | MILITARY | MILITARY | MILITARY | MILITARY | COMMERCIAL |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| 端子位置 | QUAD | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | QUAD | DUAL |
| 处于峰值回流温度下的最长时间 | 6 | 6 | 6 | 6 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 |
| 翻译 | N/A | N/A | N/A | N/A | N/A | N/A | N/A | N/A | N/A |
| 厂商名称 | IDT (Integrated Device Technology) | - | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| JESD-609代码 | e0 | - | - | e0 | e0 | e0 | e0 | e0 | e0 |
| Prop。Delay @ Nom-Sup | 9 ns | - | - | 12 ns | 9 ns | 6.5 ns | 9 ns | 6.5 ns | 8 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 端子面层 | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 筛选级别 | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | - |
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