BTA30H-600CW3G,
BTA30H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
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Blocking Voltage to 800 V
On-State Current Rating of 30 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt
−
500 V/ms minimum at 150°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
−
Internally Isolated
High Commutating dI/dt
−
4.0 A/ms minimum at 150°C
Internally Isolated (2500 V
RMS
)
These are Pb−Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
30
400
A
A
Value
Unit
V
1
2
3
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 150°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30H−600CW3G
BTA30H−800CW3G
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, T
C
= 95°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
J
= 25°C, t = 8.3 ms)
Peak Gate Current (T
J
= 150°C, t
≤
20
ms)
Average Gate Power (T
J
= 150°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H.
≤
30%, T
A
= 25°C)
HT
BTA30−xCWG
AYWW
TO−220AB
CASE 221A
STYLE 12
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x
A
Y
WW
G
I
2
t
V
DSM/
V
RSM
I
GM
P
G(AV)
T
J
T
stg
V
iso
667
V
DRM
/V
RRM
+100
4.0
0.5
−40
to +150
−40
to +150
2500
A
2
sec
V
A
W
°C
°C
V
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
No Connection
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
BTA30H−600CW3G
BTA30H−800CW3G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
−
Rev. 0
1
Publication Order Number:
BTA30H−600CW3/D
BTA30H−600CW3G, BTA30H−800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
1.8
60
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Notes 2 and 3)
(I
TM
=
±
42 A Peak)
Threshold Voltage, TJ = 150°C (Note 2)
Dynamic Resistance, TJ = 150°C (Note 2)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±100
mA)
Latching Current (V
D
= 12 V, I
G
= 42 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (T
J
= 150°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T
J
= 150°C, No Snubber) (Note 4)
Critical Rate of Rise of On−State Current
(T
J
= 150°C, f = 120 Hz, I
G
= 2 x I
GT
, tr
≤
100 ns)
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 150°C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
3. For both polarities.
4. dv/dt(c) = 35 V/ms (exponential to 200 Vpk)
(dI/dt)
c
dI/dt
dV/dt
4.0
−
500
−
−
−
−
50
−
A/ms
A/ms
V/ms
V
TM
V
to
R
d
I
GT
−
−
−
8.0
8.0
8.0
−
−
−
−
−
−
−
−
1.55
0.85
16
35
35
35
50
mA
mA
−
−
−
−
−
−
0.15
0.15
0.15
−
−
−
−
−
−
−
−
−
75
75
75
V
1.3
1.3
1.3
V
−
−
−
V
V
mW
mA
T
J
= 25°C
T
J
= 150°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.005
15
Symbol
Min
Typ
Max
Unit
I
H
I
L
V
GT
V
GD
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BTA30H−600CW3G, BTA30H−800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
I
DRM
at V
DRM
+ Voltage
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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BTA30H−600CW3G, BTA30H−800CW3G
150
145
140
135
130
125
120
115
110
105
100
95
90
85
80
40
P
AV
, AVERAGE POWER (W)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
T
C
, CASE TEMPERATURE (°C)
0
5
10
15
20
25
30
I
T(RMS)
, RMS ON-STATE CURRENT (A)
I
T(RMS)
, ON-STATE CURRENT (A)
Figure 1. RMS Current Derating
1000
Figure 2. On-State Power Dissipation
35
100
I
T
, INSTANTANEOUS ON−STATE CURRENT (A)
I
H
, HOLDING CURRENT (mA)
30
25
20
15
10
5
0
−40 −20
0
20
40
60
80
100 120
140 160
MT2 NEGATIVE
MT2 POSITIVE
10
T
J
= 125°C
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
1
Figure 4. Hold Current Variation
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 3. On-State Characteristics
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BTA30H−600CW3G, BTA30H−800CW3G
25
I
GT
, GATE TRIGGER CURRENT (mA)
20
15
Q2
10
5
0
−40 −20
V
D
= 12 V
R
I
= 30
W
Q3
Q1
1.30
V
GT
, GATE TRIGGER VOLTAGE (V)
1.10
0.90
0.70
0.50
0.30
0.10
−40 −20
Q3
Q1
V
D
= 12 V
R
I
= 30
W
Q2
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Trigger Current Variation
75
65
55
45
35
25
15
−40 −20
Q2
Figure 6. Gate Trigger Voltage Variation
V
D
= 12 V
R
I
= 30
W
Q1
Q3
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Critical Rate of Rise of Commutating
Voltage
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
-
+
MT2
1N914 51
W
G
MT1
CHARGE
200 V
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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