SEMICONDUCTOR
SYNERGY
1K x 4 ECL RAM
SY100474-3/4/5/7
SY101474-3/4/5/7
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10474-3/4/5/7
SY10/100/101474-7
FEATURES
s
Address access time, t
AA
: 3/4/5/7ns max.
s
Chip select access time, t
AC
: 2ns max.
s
Write pulse width, t
WW
: 3ns min.
s
Edge rate, tr/tf: 500ps typ.
s
Power supply current, I
EE
: –300mA, –220mA
for –5/7ns
s
Superior immunity against alpha particles provides
virtually no soft error sensitivity
s
Built with advanced ASSET™ technology
s
Fully compatible with industry standard 10K/100K
ECL I/O levels
s
Noise margins improved with on-chip voltage and
temperature compensation
s
Open emitter output for easy memory expansion
s
ESD protection of 2000V
s
Available in 24-pin Flatpack and 28-pin PLCC and
MLCC packages
DESCRIPTION
The Synergy SY10/100/101474 are 4096-bit Random
Access Memories (RAMs), designed with advanced Emitter
Coupled Logic (ECL) circuitry. The devices are organized
as 1024-words-by-4-bits and meet the standard 10K/100K
family signal levels. The SY100474 is also supply voltage-
compatible with 100K ECL, while the SY101474 operates
from 10K ECL supply voltage (–5.2V). All feature on-chip
voltage and temperature compensation for improved noise
margin.
The SY10/100/101474 employ proprietary circuit design
techniques and Synergy’s proprietary ASSET advanced
bipolar technology to achieve extremely fast access, write
pulse width and write recovery times. ASSET uses
proprietary technology concepts to achieve significant
reduction in parasitic capacitance while improving device
packing density. Synergy’s circuit design techniques, coupled
with ASSET, result not only in ultra-fast performance, but
also allow device operation with virtually no soft error
sensitivity and with outstanding device reliability in volume
production.
BLOCK DIAGRAM
A
0
A
1
A
2
A
3
Y-Decoder/Driver
A
4
A
5
A
6
A
7
A
8
A
9
X-Decoder/
Driver
Memory Cell Array
CS
WE
SA/WA*
SA/WA
SA/WA
SA/WA
DI
0
DO
0
DI
1
DO
1
DI
2
DO
2
DI
3
DO
3
*
SA = Sense Amplifier
WA = Write Amplifier
© 1999 Micrel-Synergy
Rev.: D
Amendment: /1
1
Issue Date: December 1999
SEMICONDUCTOR
SYNERGY
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10/100/101474-7
PIN CONFIGURATIONS
V
EE
A
6
NC
V
CCA
A
9
A
8
A
7
DO
3
DO
2
DO
1
WE
CS
DI
0
DI
1
DI
2
DI
3
1
2
3
4
5
6
24 23 22 21 20 19
18
17
Top View
16
Flatpack
15
F24-1
14
13
7 8 9 10 11 12
DO
0
DO
1
V
CC
V
CCA
DO
2
DO
3
4
3
2
1 28 27 26
25
24
DI
3
DI
2
DI
1
NC
DI
0
CS
WE
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
1
A
2
NC
A
3
A
4
A
5
5
6
7
8
9
10
Top View
MLCC (M28-1)
or
PLCC (J28-1)
19
11
12 13 14 15 16 17 18
NC
A
7
A
6
V
EE
PIN NAMES
Label
A
0
- A
9
CS
WE
DI
0
- DI
3
DO
0
- DO
3
V
CC
V
CCA
V
EE
NC
Function
Address Inputs
Chip Select
Write Enable
Data Input (D
IN
)
Data Output (D
OUT
)
GND (0V)
Output GND (0V)
Supply Voltage
No Connect
TRUTH TABLE
Input
CS
H
L
L
L
WE
X
L
L
H
D
IN
X
H
L
X
Output
L
L
L
D
OUT
Mode
Disabled
Write “H”
Write “L”
Read
NOTE:
H = High Voltage Level
L = Low Voltage Level
X = Don’t Care
2
NC
A
8
A
9
DO
0
23
22
21
20
NC
V
CC
SEMICONDUCTOR
SYNERGY
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10/100/101474-7
FUNCTIONAL DESCRIPTION
The Synergy SY10/100/101474 are 4096-bit RAMs
organized as 1024-words-by-4-bits. Memory cell selection
is achieved by using the 10 address bits designated as A
0
through A
9
. Each of the 2
10
possible input address
combinations corresponds to a unique word location in
memory. The active low Chip Select (CS) is provided for
memory expansion. The active low Write Enable (WE)
controls the read and write operation. Data resident on the
D
IN
inputs (DI
0
through DI
3
) is written into the addressed
location only when WE and CS are held low. In order to
perform a read operation, WE is held high, CS is held low
and the non-inverted output data at the addressed location
is transferred to D
OUT
(DO
0
through DO
3
) to be read out.
Open emitter outputs are provided for maximum flexibility
and memory expansion by allowing output wire-OR
connections. External termination of 50Ω to –2.0V or an
equivalent circuit must be used to provide the specified
output levels.
The outputs are brought to a logical low level when the
RAM is being written into (WE = LOW) or when the device
is deselected via the active low chip select pin (CS = HIGH).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
EE
V
IN
I
OUT
T
C
T
store
Rating
V
EE
Pin Potential
to V
CC
Pin
Input Voltage
DC Output Current
(Output High)
Temperature Under Bias
Storage Temperature
Value
+0.5 to –7.0
+0.5 to V
EE
–30
–55 to +125
–65 to +150
Unit
V
V
mA
°C
°C
GUARANTEED OPERATING CONDITIONS
Parameter
Supply Voltage
(1)
Case Temperature
Supply Voltage
(1)
Case Temperature
Supply Voltage
(1)
Case Temperature
NOTE:
1. Referenced to V
CC
.
Symbol Min.
10K
V
EE
T
C
100K
V
EE
T
C
101K
V
EE
T
C
–5.46
0
–4.8
0
–5.46
0
Typ.
–5.2
—
–4.5
—
–5.2
—
Max. Unit
–4.94
75
–4.2
85
–4.94
85
V
°C
V
°C
V
°C
NOTE:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS
are exceeded. This is a stress rating only and functional operation is not
implied at conditions other than those detailed in the operational sections
of this data sheet. Exposure to ABSOLUTE MAXIMUM RATlNG conditions
for extended periods may affect device reliability.
RISE AND FALL TIME
Parameter
Output Rise
Time
Output Fall
Time
Code
(1)
Symbol Min. Typ.
F
S
F
S
tr
tf
—
—
—
—
500
1500
500
1500
Max. Unit
—
—
—
—
ps
ps
CAPACITANCE
Parameter
Input Pin
Capacitance
Output Pin
Capacitance
Symbol
C
IN
C
OUT
Min.
—
—
Typ.
4
5
Max.
—
—
Unit
pF
pF
NOTE:
1. F = Fast Edge Rate
S = Standard Edge Rate
3
SEMICONDUCTOR
SYNERGY
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10/100/101474-7
10K DC ELECTRICAL CHARACTERISTICS
V
CC
= 0V; T
C
= 0°C to +75°C; V
EE
= –5.2V; Airflow > 2.5m/s; Output Load = 50Ω to –2.0V
Symbol
V
OH
Parameter
Output High Voltage
T
C
0°C
+25°C
+75°C
0°C
+25°C
+75°C
0°C
+25°C
+75°C
0°C
+25°C
+75°C
0°C
+25°C
+75°C
0°C
+25°C
+75°C
0°C to +75°C
0°C to +75°C
0°C to +75°C
0°C to +75°C
0°C to +75°C
0°C to +75°C
0°C to +75°C
Min.
–1000
–960
–900
–1870
–1850
–1830
–1020
–980
–920
—
—
—
–1145
–1105
–1045
–1870
–1850
–1830
0.0
–2
30
40
–2
0.0
–300
–220
Max.
–840
–810
–720
–1665
–1650
–1625
—
—
—
–1645
–1630
–1605
–840
–810
–720
–1490
–1475
–1450
20
2
170
220
35
60
—
Unit
mV
Condition
V
IN
= V
IH
Max. or V
IL
Min.
V
OL
Output Low Voltage
mV
V
IN
= V
IH
Max. or V
IL
Min.
V
OHC
Output High Voltage
mV
V
IN
= V
IH
Min. or V
IL
Max.
V
OLC
Output Low Voltage
mV
V
IN
= V
IH
Min. or V
IL
Max.
V
IH
Input High Voltage
mV
Guaranteed Input Voltage High
for All Inputs
Guaranteed Input Voltage Low
for All Inputs
V
IN
= V
IH
Max.
V
IN
= V
IL
Min.
V
IN
= V
IL
Min.
V
IN
= V
IH
Max.
V
IN
= V
IL
Min.
V
IN
= V
IH
Max.
All Inputs and Outputs Open
V
IL
Input Low Voltage
mV
I
IH
I
IL
I
IL
I
IH
I
IL
I
IH
I
EE
Input High Current
Input Low Current
CS Input Low Current
CS Input High Current
WE Input Low Current
WE Input High Current
Power Supply
Current
-3ns, -4ns
-5ns, -7ns
µA
µA
µA
µA
µA
µA
mA
100K/101K DC ELECTRICAL CHARACTERISTICS
V
CCA
= 0V
V
CC
= 0V
Symbol
V
OH
V
OL
V
OHC
V
OLC
V
IH
V
IL
I
IH
I
IL
I
IL
I
IH
I
IL
I
IH
I
EE
V
EE
= –4.5V (100K)
V
EE
= –5.2V (101K)
Parameter
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
CS Input Low Current
CS Input High Current
WE Input Low Current
WE Input High Current
Power Supply 3ns, 4ns
Current
-5ns, -7ns
Min.
–1025
–1810
–1035
—
–1165
–1810
0.0
–2
30
40
–2
0.0
–300
–220
T
C
= 0°C to +85°C
Max.
–880
–1620
—
–1610
–880
–1475
20
2
170
220
35
60
—
Unit
mV
mV
mV
mV
mV
mV
µA
µA
µA
µA
µA
µA
mA
Airflow > 2.5m/s
Output Load = 50Ω to –2.0V
Condition
V
IN
= V
IH
Max. or V
IL
Min.
V
IN
= V
IH
Max. or V
IL
Min.
V
IN
= V
IH
Min. or V
IL
Max.
V
IN
= V
IH
Min. or V
IL
Max.
Guaranteed Input Voltage Highfor All Inputs
Guaranteed Input Voltage Lowfor All Inputs
V
IN
= V
IH
Max.
V
IN
= V
IL
Min.
V
IN
= V
IL
Min.
V
IN
= V
IH
Max.
V
IN
= V
IL
Min.
V
IN
= V
IH
Max.
All Inputs and Outputs Open
4
SEMICONDUCTOR
SYNERGY
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10/100/101474-7
AC ELECTRICAL CHARACTERISTICS
AC TEST CONDITIONS
V
CC
= V
CCA
= 0V
V
EE
= –5.2V
±
5%(10K)
V
EE
= –4.5V
±
0.3V(100K)
V
EE
= –5.2V
±
5%(101K)
Output Load = 50Ω to –2.0V
T
C
= 0°C to +75°C (10K)
T
C
= 0°C to +85°C (100K/101K)
Airflow > 2.5m/s
T
C
10K
0°C
+25°C
+75°C
0°C to +85°C
V
IH
–0.933V
–0.90V
–0.863V
–0.90V
V
IL
–1.733V
–1.70V
–1.663V
–1.70V
Loading Condition
GND
100/101K
Input Pulse
V
IH
V
CCA
V
CC
OUT
V
EE
R
L
C
L
80%
20%
V
IL
t
r
t
r
= t
f
= 1.0ns typ.
t
f
0.01µF
V
EE
–2.0V
NOTE:
OUTPUT LOAD: R
L
= 50Ω
C
L
= 5pF* (typ.)
* (Modeled as 50Ω transmission line
terminated to –2V.)
All timing measurements referenced to 50% input levels.
READ CYCLE
SY10474-3
SY100474-3
SY101474-3
Symbol
t
AA
t
AC
t
RC
TAVQV
TSLQV
TSHQL
Parameter
Address Access Time
Chip Select Access Time
Chip Select Recovery Time
Min.
—
—
—
Max.
3
2
2
SY10474-4
SY100474-4
SY101474-4
Min.
—
—
—
Max.
4
2
2
SY10474-5
SY100474-5
SY101474-5
Min.
—
—
—
Max.
5
3
3
SY10474-7
SY100474-7
SY101474-7
Min.
—
—
—
Max.
7
3
3
Unit
ns
ns
ns
READ CYCLE TIMING DIAGRAM
CS
50%
t
AC
t
RC
80%
50%
20%
t
r
t
f
Address
50%
t
AA
D
OUT
50%
D
OUT
5
MEMS传感器
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