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5962R0520802VYC: 产品描述512K X 8 STANDARD SRAM, 15 ns, DFP36; 产品类别存储存储; 文件大小334KB，共13页; 制造商Atmel (Microchip)

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5962R0520802VYC概述

512K X 8 STANDARD SRAM, 15 ns, DFP36

512K × 8 标准存储器, 15 ns, 双侧引脚扁平封装36

5962R0520802VYC规格参数

参数名称	属性值
厂商名称	Atmel (Microchip)
零件包装代码	DFP
包装说明	DFP, FL36,.5
针数	36
Reach Compliance Code	compliant
ECCN代码	3A001.A.2.C
最长访问时间	15 ns
I/O 类型	COMMON
JESD-30 代码	R-XDFP-F36
JESD-609代码	e4
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	36
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	512KX8
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DFP
封装等效代码	FL36,.5
封装形状	RECTANGULAR
封装形式	FLATPACK
并行/串行	PARALLEL
电源	3.3 V
认证状态	Qualified
筛选级别	MIL-PRF-38535 Class V
座面最大高度	3.05 mm
最大待机电流	0.0015 A
最小待机电流	2 V
最大压摆率	0.18 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子节距	1.27 mm
端子位置	DUAL
总剂量	100k Rad(Si) V
宽度	12.195 mm
Base Number Matches	1

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Features

•

Operating Voltage: 3.3V

•

Access Time:

•

– 15 ns (AT60142F)

Very Low Power Consumption

– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

Wide Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Designed on 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

500 Mils Wide FP36 Package

ESD Better than 4000V

Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

Description

The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns or better over the full military temperature range. The high stability of the 6T cell

provides excellent protection against soft errors due to noise.

The AT60142F is processed according to the methods of the latest revision of the MIL

PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rad Hard

512K x 8

Very Low Power

CMOS SRAM

AT60142F

Rev. 4408G–AERO–04/09

5962R0520802VYC相似产品对比

	5962R0520802VYC	5962-0520802QYC	5962-0520802VYC	5962-0520802QXC	5962-0520802VXC	5962R0520802VXC	930105202
描述	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36	512K X 8 STANDARD SRAM, 15 ns, DFP36
零件包装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP
包装说明	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP,
针数	36	36	36	36	36	36	36
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns
JESD-30 代码	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bi	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1
端子数量	36	36	36	36	36	36	36
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DFP	DFP	DFP	DFP	DFP	DFP	DFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Not Qualified
座面最大高度	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	12.195 mm	12.195 mm	12.195 mm	12.195 mm	12.195 mm	12.195 mm	12.195 mm
Base Number Matches	1	1	1	1	1	1	1
厂商名称	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	Atmel (Microchip)
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-609代码	e4	e4	e4	e4	e4	e4	-
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
封装等效代码	FL36,.5	FL36,.5	FL36,.5	FL36,.5	FL36,.5	FL36,.5	-
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-
筛选级别	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	-
最大待机电流	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	-
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V	-
最大压摆率	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	-
端子面层	GOLD	GOLD	GOLD	Gold (Au)	Gold (Au)	Gold (Au)	-

5962R0520802VYC

5962R0520802VYC在线购买

5962R0520802VYC概述

5962R0520802VYC规格参数

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