Hebei I.T. (Shanghai) Co., Ltd.
LED SPECIFICATION
Part No.：510E850C
Ø
Features：
l
Single color
l
High Power output
l
Low power consumption
l
High reliability and long life
Ø
Descriptions：
l
Dice material：AlGaAs
l
Emitting Color：Infrared Emitting diodes
l
Device Outline：φ5mm Round Type
l
Lens Type：Black Transparent
Ø
Directivity:
Note：
●
All dimensions are millimeters.
●
Tolerance is +/-0.25mmunless otherivise noted
DIRECTIVITY
Relative Luminous Intensity
1.0
0°
Ta=25° C
IF=20mA
30°
0.5
60°
0
90°
60°
30°
0°
0.5
90°
1.0
Radiation Angle
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Hebei I.T. (Shanghai) Co., Ltd.
LED SPECIFICATION
Part No.：510E850C
Ø
Absolute maximum ratings（Ta = 25℃）
Characteristics
Parameter
Symbol
Test Conditions
Min.
Power Dissipation
Reverse Voltage
Forward Current
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Unit
Max.
100
——
1000
+85
+100
260
mW
V
mA
℃
℃
℃
——
9
——
-40
-40
P
d
V
R
I
FM
T
opr
T
str
T
sd
——
I
R
=10μA
Duty=0.01mS
1kHz
——
——
t≤5sec,2mm from case
——
Ø
Electrical and optical characteristics
（Ta
= 25℃）
Value
Parameter
Forward Voltage
Reverse Current
Peak Wavelength
Spectrum Width of Half
Value
Radiant Intensity
Viewing Angle
Symbol
V
F
I
R
λ
p
Δλ
Test
Condition
Min.
I
F
= 50mA
V
R
= 9V
I
F
= 50mA
I
F
= 50mA
I
F
=50mA
I
F
= 50mA
----
----
----
——
——
----
Typ.
1.55
----
850
45
160
13
Max.
1.8
10
----
——
——
----
V
μA
nm
nm
mW/Sr
Deg.
Unit
Ie
2θ
1/2
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Hebei I.T. (Shanghai) Co., Ltd.
LED SPECIFICATION
Part No.：510E850C
Ø
Typical electrical/optical characteristic curves：
100
80
60
40
20
0
1.3
Radiant Intensity(mW/sr)
Relative Value at IF=50mA
1.4 1.5 1.6 1.7
Forward Voltage(V)
1.8
Forward Current(mA)
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
IF-Forward Current (mA)
100
100
Forward Current(mA)
80
60
40
20
0
0
20
40
60
80
100
Radiant Intensity
2.5
2.0
1.5
1.0
0.5
0
-40
-20
0
20
40
60
80
Ambient Temperature T
A
(
℃
)
100
Ambient Temperature T
A
(
℃
)
Relative Luminous Intensity
100
75
50
25
0
500
600
700
800
900
Wavelength
λ
(nm)
1000
1100
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