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5962R0622901VXX

产品描述Standard SRAM, 512KX32, 25ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68
产品类别存储    存储   
文件大小370KB,共18页
制造商Defense Logistics Agency
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5962R0622901VXX概述

Standard SRAM, 512KX32, 25ns, CMOS, CQFP68, 0.950 INCH, NCTB, CERAMIC, MQFP-68

5962R0622901VXX规格参数

参数名称属性值
厂商名称Defense Logistics Agency
零件包装代码QFP
包装说明QFF,
针数68
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
最长访问时间25 ns
其他特性IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 代码S-CQFP-F68
JESD-609代码e4
长度24.14 mm
内存密度16777216 bit
内存集成电路类型STANDARD SRAM
内存宽度32
功能数量1
端子数量68
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512KX32
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QFF
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
认证状态Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度4.7 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置QUAD
总剂量300k Rad(Si) V
宽度24.14 mm
Base Number Matches1

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Features
16 Mbit SRAM Multi Chip Module
Allows 32-, 16- or 8-bit access configuration
Operating Voltage: 3.3V
+
0.3V
Access Time
– 20 ns, 18 ns for AT68166F
Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns
(1)
– Standby: 13 mW (Typ)
Military Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Die manufactured on Atmel 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
ESD Better than 4000V
Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
950 Mils Wide MQFP 68 Package
Mass : 8.5 grams
1. Only for AT68166F-18. 450mW for AT68166F-20.
Rad Hard
16 MegaBit 3.3V
SRAM Multi-
Chip Module
AT68166F
Note:
Description
The AT68166F is a 16Mbit SRAM packaged in a hermetic Multi Chip Module
(MCM) for space applications.
The AT68166F MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166F memory.
The AT68166F is powered at 3.3V.
The AT68166F is processed according to the test methods of the latest revision of the
MIL-PRF-38535 or the ESCC 9000.
7747B–AERO–04/09

 
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