Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144
| 参数名称 | 属性值 |
| 厂商名称 | SK Hynix(海力士) |
| 零件包装代码 | SODIMM |
| 包装说明 | , |
| 针数 | 144 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 6 ns |
| JESD-30 代码 | R-XZMA-N144 |
| 内存密度 | 805306368 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM MODULE |
| 内存宽度 | 64 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 144 |
| 字数 | 12582912 words |
| 字数代码 | 12000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 12MX64 |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子位置 | ZIG-ZAG |
| Base Number Matches | 1 |
| HYM71V65M1201LTX-8 | HYM71V65M1201LTX-10P | HYM71V65M1201TX-8 | HYM71V65M1201TX-10S | HYM71V65M1201LTX-10S | HYM71V65M1201TX-10P | |
|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 12MX64, 6ns, CMOS, SODIMM-144 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM |
| 针数 | 144 | 144 | 144 | 144 | 144 | 144 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 6 ns | 6 ns | 6 ns | 6 ns | 6 ns | 6 ns |
| JESD-30 代码 | R-XZMA-N144 | R-XZMA-N144 | R-XZMA-N144 | R-XZMA-N144 | R-XZMA-N144 | R-XZMA-N144 |
| 内存密度 | 805306368 bit | 805306368 bit | 805306368 bit | 805306368 bit | 805306368 bi | 805306368 bi |
| 内存集成电路类型 | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| 内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 144 | 144 | 144 | 144 | 144 | 144 |
| 字数 | 12582912 words | 12582912 words | 12582912 words | 12582912 words | 12582912 words | 12582912 words |
| 字数代码 | 12000000 | 12000000 | 12000000 | 12000000 | 12000000 | 12000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 12MX64 | 12MX64 | 12MX64 | 12MX64 | 12MX64 | 12MX64 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
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