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FM24V10-G

产品描述SPECIALTY MEMORY CIRCUIT, PDSO8
产品类别存储    存储   
文件大小206KB,共15页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM24V10-G概述

SPECIALTY MEMORY CIRCUIT, PDSO8

专用存储器电路, PDSO8

FM24V10-G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknow
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度1048576 bi
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00015 A
最大压摆率0.001 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.9 mm

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下载PDF文档
Preliminary
FM24V10
1Mb Serial 3V F-RAM Memory
Features
1M bit Ferroelectric Nonvolatile RAM
Organized as 131,072 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM24VN10)
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current < 150
µA
(typ.
@ 100KHz
)
90
µA
Standby Current (typ.)
5
µA
Sleep Mode Current (typ.)
Industry Standard Configuration
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC Package
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The
FM24VN10 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Description
The FM24V10 is a 1-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V10 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V10 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V10 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
Pin Configuration
NC
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A1, A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.1
Feb. 2009
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 15

FM24V10-G相似产品对比

FM24V10-G FM24V10 FM24V10-GTR
描述 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
组织 128KX8 128K × 8 128KX8
表面贴装 YES Yes YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL
是否无铅 不含铅 - 不含铅
是否Rohs认证 符合 - 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 SOIC - SOIC
包装说明 SOP, SOP8,.25 - SOP, SOP8,.25
针数 8 - 8
Reach Compliance Code unknow - unknow
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8
JESD-609代码 e3 - e3
长度 4.9 mm - 4.9 mm
内存密度 1048576 bi - 1048576 bi
内存集成电路类型 MEMORY CIRCUIT - MEMORY CIRCUIT
湿度敏感等级 1 - 1
字数 131072 words - 131072 words
字数代码 128000 - 128000
工作模式 SYNCHRONOUS - SYNCHRONOUS
最高工作温度 85 °C - 85 °C
最低工作温度 -40 °C - -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 SOP - SOP
封装等效代码 SOP8,.25 - SOP8,.25
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
峰值回流温度(摄氏度) 260 - 260
电源 2.5/3.3 V - 2.5/3.3 V
认证状态 Not Qualified - Not Qualified
座面最大高度 1.75 mm - 1.75 mm
最大待机电流 0.00015 A - 0.00015 A
最大压摆率 0.001 mA - 0.001 mA
最大供电电压 (Vsup) 3.6 V - 3.6 V
最小供电电压 (Vsup) 2 V - 2 V
标称供电电压 (Vsup) 3.3 V - 3.3 V
技术 CMOS - CMOS
端子面层 MATTE TIN - MATTE TIN
端子节距 1.27 mm - 1.27 mm
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED
宽度 3.9 mm - 3.9 mm

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