IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA316-800ET
3Q Hi-Com Triac
Rev. 02 — 1 December 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The
"series ET" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series ET" is intended for interfacing with low power
drivers including microcontrollers where "high junction operating temperature" capability is
required.
1.2 Features and benefits
3Q technology for improved noise
immunity
Direct interfacing with low power
drivers and microcontrollers
Good immunity to false turn-on by
dV/dt
High commutation capability with
sensitive gate
High junction operating temperature
capability
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
1.3 Applications
Applications subject to high
temperature
Electronic thermostats (heating and
cooling)
High power motor controls e.g.
washing machines and vacuum
cleaners
Refrigeration and air-conditioner
compressor controls
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak
off-state voltage
non-repetitive
peak on-state
current
junction
temperature
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
Conditions
Min
-
-
Typ
-
-
Max Unit
800
140
V
A
T
j
-
-
150
°C
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
Quick reference data
…continued
Parameter
RMS on-state
current
Conditions
full sine wave; T
mb
≤
126 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
Min
-
Typ
-
Max Unit
16
A
Table 1.
Symbol
I
T(RMS)
Static characteristics
I
GT
gate trigger
current
-
-
-
-
-
-
10
10
10
mA
mA
mA
2. Pinning information
Table 2.
Pin
1
2
3
mb
T1
T2
G
T2
Pinning information
Symbol Description
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA316-800ET
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BTA316-800ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 December 2010
2 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤
126 °C;
see
Figure 3;
see
Figure 1;
see
Figure 2
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
800
16
140
150
98
100
2
5
0.5
150
150
Unit
V
A
A
A
A
2
s
A/µs
A
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
20
I
T(RMS)
(A)
16
003aab777
60
I
T(RMS)
(A)
50
003aaf674
40
12
30
8
20
4
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
−2
10
−1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
BTA316-800ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 December 2010
3 of 14
NXP Semiconductors
BTA316-800ET
3Q Hi-Com Triac
20
P
tot
(W)
15
003aab689
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
= 180°
120°
α
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
Fig 3.
160
I
TSM
(A)
120
Total power dissipation as a function of RMS on-state current; maximum values
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25
°C
max
40
0
1
10
10
2
number of cycles (n)
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316-800ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 1 December 2010
4 of 14
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