BTA316-600B0
3Q Hi-Com Triac
4 February 2013
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/
dt can occur. This "series B0" triac will commutate the full RMS current at the maximum
rated junction temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High immunity to false turn-on by dV/dt
High minimum I
GT
for guaranteed immunity to gate noise
High voltage capability
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high commutation capability with maximum false trigger immunity
3. Applications
•
•
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Refrigeration and air conditioning compressors
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
600
140
125
16
Unit
V
A
°C
A
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TO
-2
20A
B
NXP Semiconductors
BTA316-600B0
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
10
10
10
Typ
-
-
-
Max
50
50
50
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
20
-
-
A/ms
2500
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA316-600B0
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BTA316-600B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
4 February 2013
2 / 12
NXP Semiconductors
BTA316-600B0
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 101 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
20
I
T(RMS)
(A)
16
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
16
140
150
98
100
2
5
0.5
150
125
003aab685
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aab684
I
T(RMS)
(A)
50
40
60
12
30
8
20
4
10
0
10
-2
0
-50
0
50
100
150
T
mb
(°C)
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T
mb
= 101 °C
RMS on-state current as a function of surge
duration; maximum values
BTA316-600B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
4 February 2013
3 / 12
NXP Semiconductors
BTA316-600B0
3Q Hi-Com Triac
20
P
tot
(W)
15
003aab689
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
α = conduction angle
Fig. 3.
160
I
TSM
(A)
120
Total power dissipation as a function of RMS on-state current; maximum values
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316-600B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
4 February 2013
4 / 12
NXP Semiconductors
BTA316-600B0
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab671
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
8. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
60
Max
1.2
1.7
-
Unit
K/W
K/W
K/W
R
th(j-a)
BTA316-600B0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
4 February 2013
5 / 12
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