BTA312X-600E
3Q Hi-Com Triac
25 July 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package. This "series E" triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 59 °C;
Fig. 1;
Fig. 2; Fig. 3
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Conditions
Min
-
-
Typ
-
-
Max
600
12
Unit
V
A
Static characteristics
I
GT
gate trigger current
-
-
-
-
-
-
10
10
10
mA
mA
mA
WeEn Semiconductors
BTA312X-600E
3Q Hi-Com Triac
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BTA312X-600E
BTA312X-600E/DG
Package
Name
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
7. Marking
Table 4. Marking codes
Type number
BTA312X-600E
BTA312X-600E/DG
BTA312X-600EDG
Marking code
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
25 July 2016
2 / 13
WeEn Semiconductors
BTA312X-600E
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
15
003a a b679
Conditions
Min
-
Max
600
12
100
110
50
100
2
5
0.5
150
125
003a a b681
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
100
I
T(RMS )
(A)
I
T(RMS )
(A)
80
10
60
40
5
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 59 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
25 July 2016
3 / 13
WeEn Semiconductors
BTA312X-600E
3Q Hi-Com Triac
20
P
tot
(W)
16
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
003aab690
95
α
α = 180 °
120°
T
mb (max)
(°C)
101
12
α
90 °
60°
30°
107
8
113
4
119
0
0
3
6
9
I
T(RMS)
(A)
125
12
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
25 July 2016
4 / 13
WeEn Semiconductors
BTA312X-600E
3Q Hi-Com Triac
120
I
TSM
(A)
100
80
60
40
20
0
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
25 July 2016
5 / 13
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