BTA312-800CT
3Q Hi-Com Triac
28 April 2015
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB)
plastic package intended for use in circuits where high static and dynamic dV/dt and
high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the
maximum rated junction temperature (T
j
= 150 °C) without the aid of a snubber. It is used
in applications where "high junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitve gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
mb
≤ 125 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
100
150
12
Unit
V
A
°C
A
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TO
-2
20A
B
NXP Semiconductors
BTA312-800CT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
2
Typ
-
-
-
Max
35
35
35
Unit
mA
mA
mA
Static characteristics
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA312-800CT
BTA312-800CT/DG
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
BTA312-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
28 April 2015
2 / 13
NXP Semiconductors
BTA312-800CT
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 125 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
16
I
T(RMS )
(A)
12
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
12
100
110
50
100
2
5
0.5
150
150
003a a f738
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
G
= 70 mA
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003a a b688
50
I
T(RMS )
(A)
40
30
8
20
4
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T
mb
= 125 °C
RMS on-state current as a function of surge
duration; maximum values
BTA312-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
28 April 2015
3 / 13
NXP Semiconductors
BTA312-800CT
3Q Hi-Com Triac
20
P
tot
(W)
16
003a a b808
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90 °
60°
30°
12
8
4
0
0
3
6
9
I
T(RMS )
(A)
12
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
28 April 2015
4 / 13
NXP Semiconductors
BTA312-800CT
3Q Hi-Com Triac
I
TSM
(A)
100
80
60
40
20
0
120
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
28 April 2015
5 / 13
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