Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs
■Features
• Compact surface mount package (TO252-5)
• Output current: 1.0 A
• Low dropout voltage: V
DIF
≤
0.6 V (at I
O
= 1.0
A)
• Low current consumption: Iq
≤
350
µ
A
(600
µ
A for SI-3010KM/SI-3050KM/SI-
3090KM/SI-3120KM)
• Low circuit current at output OFF: Iq (OFF)
≤
1
µ
A
• Built-in overcurrent and thermal protection
circuits
• Output ON/OFF control function
• Compatible with low ESR capacitors (SI-
3012KM/SI-3025KM/SI-3033KM)
Parameter
DC Input Voltage
Output Control Terminal Voltage
DC Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance (Junction to Ambient Air)
Thermal Resistance (Junction to case)
Symbol
V
IN
V
c
I
O
P
D*2
T
j
T
stg
SI-3012KM/
3025KM/3033KM
17
V
IN
1.0
1
–30 to +125
–30 to +125
95
6
■Absolute
Maximum Ratings
Ratings
SI-3010KM/3050KM/
3090KM/3120KM
35
*1
(T
a
=25°C)
Unit
V
V
A
W
°C
°C
°C/W
°C/W
θ
j-a*2
θ
j-c
*1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
of the electrical characteristics.
*2: When mounted on glass-epoxy board of 900mm
2
(copper laminate area 4.3%).
■Applications
• Secondary stabilized power supply (local power supply)
■Recommended
Operating Conditions
Ratings
Parameter
Input Voltage Range
Output Current Range
Operating Ambient Temperature
Operating Junction Temperature
Symbol
V
IN
I
O
T
op
T
j
SI-3012KM
2.4
*2
to
6.0
*1
SI-3025KM
2.4
*2
to
5
*1
SI-3033KM
*2
SI-3010KM
2.4
*2
to
27
*1
0 to 1.0
–30 to +85
–20 to +100
SI-3050KM
2.4
*2
to
17
*1
SI-3090KM
*2
SI-3120KM
*2
Unit
V
A
°C
°C
to
6
*1
to
20
*1
to
25
*1
*1: V
IN
(max) and I
O
(max) are restricted according to operating conditions due to the relation P
D
= (V
IN
-V
O
)
×
I
O
. Please calculate these values referring to the Copper Laminate Area
vs. Power Dissipation data as shown hereinafter.
*2: Refer to the Dropout Voltage parameter.
■Electrical
Characteristics 1 (Low V
O
type compatible with low ESR output capacitor)
Ratings
Parameter
Input Voltage
Output Voltage
(Reference voltage VADJ for SI-3012KM)
Line Regulation
Load Regulation
Symbol
min.
V
IN
V
O
(V
ADJ
)
Conditions
∆V
OLINE
Conditions
∆V
OLOAD
Conditions
V
DIF
Dropout Voltage
Conditions
Conditions
Quiescent Circuit Current
Circuit Current at Output OFF
Temperature Coefficient
of Output Voltage
Ripple Rejection
Overcurrent Protection
Starting Current
*2
Control Voltage (Output ON)
Control Voltage (Output OFF)
V
C
Control Current
Terminal (Output ON)
Control Current
(Output OFF)
Iq
Conditions
Iq (OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
–5
V
C
=2V
0
V
C
=0V
–5
2.0
0.8
40
V
C
=2V
0
V
C
=0V
–5
1.1
V
IN
=3.3V
2.0
0.8
40
V
C
=2V
0
V
C
=0V
V
IN
=3.3V, V
C
=0V
±0.3
T
j
=0 to 100°C (V
C
=2.5V)
55
V
IN
=3.3V, f=100 to 120H
Z
(V
O
=2.5V)
I
O
=0.5A (V
O
=2.5V)
0.6
I
O
=1A (V
O
=2.5V)
350
V
IN
=3.3V, I
O
=0A, V
C
=2V, R2=24kΩ
1
V
IN
=3.3V, V
C
=0V
±0.3
T
j
=0 to 100°C
55
V
IN
=3.3V, f=100 to 120H
Z
1.1
V
IN
=3.3V
2.0
0.8
40
V
IN
=3.3V, I
O
=0A, V
C
=2V
1
V
IN
=5V, V
C
=0V
±0.3
T
j
=0 to 100°C
55
V
IN
=5V, f=100 to 120H
Z
1.1
V
IN
=5V
I
O
=1A
350
V
IN
=5V, I
O
=0A, V
C
=2V
1
2.4
*1
1.24
1.28
V
IN
=3.3V, I
O
=10mA
15
V
IN
=3.3 to 8V, I
O
=10mA (V
O
=2.5V)
40
V
IN
=3.3V, I
O
=0 to 1A (V
O
=2.5V)
0.4
I
O
=0.5A
0.6
I
O
=1A
350
V
IN
=3.3V, I
O
=0 to 1A
0.4
I
O
=0.5A
0.6
V
IN
=3.3 to 8V, I
O
=10mA
40
V
IN
=5V, I
O
=0 to 1A
0.4
V
1.32
SI-3012KM (Variable type)
typ.
max.
min.
*1
SI-3025KM
typ.
2.50
V
IN
=3.3V, I
O
=10mA
15
max.
2.55
min.
*1
SI-3033KM
typ.
3.300
V
IN
=5V, I
O
=10mA
15
V
IN
=5 to 10V, I
O
=10mA
50
max.
Unit
V
3.366
V
mV
mV
2.45
3.234
µ
A
µ
A
mV/
°C
dB
A
V
µ
A
µ
A
*1: Refer to the Dropout Voltage parameter.
*2: I
S1
is specified at the 5% drop point of output voltage V
O
on the condition that V
IN
=overcurrent protection starting current, I
O
= 10 mA).
*3: Output is OFF when output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
16
ICs
SI-3000KM Series
■Electrical
Characteristics 2 (High V
O
type)
Ratings
Parameter
Input Voltage
Output Voltage
(Reference voltage VADJ for SI-3010KM)
Line Regulation
Conditions
∆V
OLOAD
Load Regulation
Conditions
V
DIF
Dropout Voltage
Conditions
Conditions
Iq
Quiescent Circuit Current
Conditions
Circuit Current at Output OFF
Temperature Coefficient of
Output Voltage
Ripple Rejection
Conditions
Overcurrent Protection
Starting Current
*2
Control Voltage (Output ON)
Control Voltage (Output OFF)
V
C
Control Current
Terminal (Output ON)
Control Current
(Output OFF)
Input Overvoltage Shutdown Voltage
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
V
OVP
Conditions
33
I
O
=10mA
–5
V
C
=2V
0
V
C
=0V
26
I
O
=10mA
–5
2.0
0.8
40
V
C
=2V
0
V
C
=0V
30
I
O
=10mA
–5
Iq (OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
V
IN
=7V, V
C
=0V
±0.5
T
j
=0 to 100°C (V
O
=5V)
75
V
IN
=7V,
f=100 to 120Hz (V
O
=5V)
1.1
V
IN
=7V
2.0
0.8
40
V
C
=2V
0
V
C
=0V
33
I
O
=10mA
–5
1.1
V
IN
=7V
2.0
0.8
40
V
C
=2V
0
V
C
=0V
I
O
=0.5A (V
O
=5V)
0.6
I
O
=1A (V
O
=5V)
600
V
IN
=7V, I
O
=0A, V
C
=2V
R2=10kΩ
1
V
IN
=7V, V
C
=0V
±0.5
T
j
=0 to 100°C
75
V
IN
=7V,
f=100 to 120Hz
1.1
V
IN
=11V
2.0
0.8
40
V
IN
=7V, I
O
=0A,
V
C
=2V
1
V
IN
=11V, V
C
=0V
±1.0
T
j
=0 to 100°C
68
V
IN
=11V,
f=100 to 120Hz
1.1
V
IN
=14V
I
O
=1A
600
V
IN
=11V, I
O
=0A,
V
C
=2V
1
V
IN
=14V, V
C
=0V
±1.5
T
j
=0 to 100°C
66
V
IN
=14V,
f=100 to 120Hz
dB
V
IN
=7V,
I
O
=0 to 1A (V
O
=5V)
0.3
I
O
=0.5A
0.6
I
O
=1A
600
V
IN
=14V, I
O
=0A,
V
C
=2V
1
Symbol
V
IN
V
O
(V
ADJ
)
Conditions
∆V
OLINE
V
IN
=6 to 11V,
I
O
=10mA (V
O
=5V)
75
V
IN
=7V, I
O
=0 to 1A
0.3
I
O
=0.5A
0.6
I
O
=1A
600
SI-3010KM (Variable type)
min.
2.4
*1
0.98
1.00
1.02
30
V
IN
=7V, I
O
=10mA
typ.
max.
min.
*1
SI-3050KM
typ.
5.00
max.
5.10
30
V
IN
=6 to 11V, I
O
=10mA
75
min.
*1
SI-3090KM
typ.
9.00
max.
9.18
54
V
IN
=10 to 15V, I
O
=10mA
135
V
IN
=11V, I
O
=0 to 1A
0.3
min.
*1
SI-3120KM
typ.
12.00
max.
Unit
V
12.24
72
mV
4.90
8.82
11.76
V
IN
=7V, I
O
=10mA
V
IN
=11V, I
O
=10mA
V
IN
=14V, I
O
=10mA
V
V
IN
=13 to 18V, I
O
=10mA
180
mV
V
IN
=14V, I
O
=0 to 1A
0.3
I
O
=0.5A
0.6
V
µ
A
µ
A
mV/
°C
A
V
µ
A
µ
A
V
*1: Refer to the Dropout Voltage parameter.
*2: I
S1
is specified at the 5% drop point of output voltage V
O
on the condition that V
IN
=overcurrent protection starting current, I
O
= 10 mA).
*3: Output is OFF when output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*4: SI-3010KM, SI-3050KM and SI-3090KM, SI-3120KM cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during
start-up stage.
(1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) V
O
adjustment by raising ground voltage
*5: V
IN
(max) and I
O
(max) are restricted by the relation P
D
= (V
IN
- V
O
)
×
I
O
. Please calculate these values referring to the Copper Laminate Area vs. Power Dissipation data as shown
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下，并且空间占用小、耗能低。 同时，便携式医疗设备还需要足够的计算能力以便处理医疗数据，能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑，上述需求需要低功耗的单片机（MCU）和数字信号控制器（Digital Signal Controller，DSC）。 正是有了嵌入式处理器，设计人员才有可能设...[详细]
控制器局部网CAN(Controller Area Network)属于现场总线的一种，是一种有效支持分布式控制或实时控制的串行通信网络，被公认为是最有前途的现场总线之一。 在工业控制系统中，电动执行器是电动单元组合仪表中一个很重要的执行单元。它由控制电路和执行机构两个在电路上完全独立的部分组成，可接收来自调节器的电控信号，将其线性地转换成机械转角或直线位移，用来操纵风门、挡板、阀门等...[详细]
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
