IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BTA212 series B
Three quadrant triacs
high commutation
Product
specification
September 1997
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended
for use in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
BTA212 series B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA212-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500B
500
12
95
600B
600
12
95
800B
800
12
95
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/μs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
12
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
95
105
45
100
2
5
5
0.5
150
125
A
A
A
2
s
A/μs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997
1
Rev 1.200
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
BTA212 series B
TYP.
-
-
60
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
MIN.
2
2
2
-
-
-
-
-
-
0.25
-
TYP.
18
21
34
31
34
30
31
1.3
0.7
0.4
0.1
MAX.
50
50
50
60
90
60
60
1.6
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 12 A;
without snubber; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
MIN.
1000
-
-
TYP.
4000
24
2
MAX.
-
-
-
UNIT
V/μs
A/ms
μs
2
Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA212 series B
20
Ptot / W
BT138
Tmb(max) / C
95
= 180
15
IT(RMS) / A
BT138
15
1
120
90
60
99 C
102.5
10
110
10
30
5
5
117.5
0
0
5
IT(RMS) / A
10
125
15
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
BTA212
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
1000
25
IT(RMS) / A
BT138
20
dI
T
/dt limit
100
15
10
IT
T
10
10us
I TSM
time
5
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT138
IT
80
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
100
1.6
1.4
1.2
1
BT136
Tj initial = 25 C max
60
40
0.8
20
0.6
0.4
-50
0
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 1997
3
Rev 1.200
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