IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA208S-800F
3Q Hi-Com Triac
11 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK)
surface mountable plastic package. This "series F" triac balances the requirements of
commutation performance and gate sensitivity and is intended for interfacing with low
power drivers and logic ICs including microcontrollers in higher noise environments.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability
High voltage capability
Intermediate sensitivity for maximum noise immunity and logic level triggering
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats
General purpose motor controls
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
25
mA
-
-
25
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
65
8
Unit
V
A
A
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NXP Semiconductors
BTA208S-800F
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
-
Max
25
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
[1]
gate
mounting base; connected to
main terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA208S-800F
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
7. Marking
Table 4.
Marking codes
Marking code
208S8F
Type number
BTA208S-800F
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 August 2014
2 / 14
NXP Semiconductors
BTA208S-800F
3Q Hi-Com Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
10
I
T(RMS)
(A)
8
102 °C
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
8
65
71
21
100
2
5
0.5
150
125
003aaf617
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aaf581
25
I
T(RMS)
(A)
20
6
15
4
10
2
5
0
- 50
0
50
100
150
T
mb
(°C)
0
10
- 2
10
- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T
mb
= 102 °C
RMS on-state current as a function of surge
duration; maximum values
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 August 2014
3 / 14
NXP Semiconductors
BTA208S-800F
3Q Hi-Com Triac
P
tot
(W)
10
8
6
12
003aaf618
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
101
T
mb(max)
(°C)
105
109
113
117
121
4
2
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 August 2014
4 / 14
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