BTA206X-800CT
3Q Hi-Com Triac
22 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package intended for use in circuits where high static and dynamic dV/dt
and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the
maximum rated junction temperature (T
j
= 150 °C) without the aid of a snubber. it is used
where "high junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
Motor controls for home appliances
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
h
≤ 114 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
60
150
6
Unit
V
A
°C
A
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-2
20F
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
4
4
4
Typ
-
-
-
Max
35
35
35
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
10
-
-
A/ms
500
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
BTA206X-800CT
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
2 / 13
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA206X-800CT
BTA206X-800CT/L01
BTA206X-800CT/L02
BTA206X-800CT/L03
TO-220F
TO-220F
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
SOT186A
SOT186A
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 114 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
6
60
66
18
100
2
5
0.5
150
150
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 10 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
BTA206X-800CT
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
3 / 13
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
8
I
T(RMS)
(A)
6
003aag549
114 °C
I
T(RMS)
(A)
15
12
18
003aag550
4
9
6
2
3
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 114 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
003aag552
10
P
tot
(W)
8
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
105
T
109.5
h(max)
(°C)
114
118.5
123
127.5
132
136.5
α = 180°
120°
90°
60°
30°
6
4
2
141
145.5
0
0
1.5
3
4.5
6
I
T(RMS)
(A)
150
7.5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA206X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
4 / 13
NXP Semiconductors
BTA206X-800CT
3Q Hi-Com Triac
80
ITSM
(A)
60
003aag541
40
I
T
20
I
TSM
t
0
T
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
003aag542
I
T
I
TSM
(A)
(1)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
10
10
-2
10
-1
1
10
t
p
(ms)
10
2
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA206X-800CT
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
5 / 13
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