PD - 96226
IRF8734PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
l
Lead-Free
V
DSS
R
DS(on)
max
Qg (typ.)
30V 3.5m @V
GS
= 10V 20nC
:
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Power Dissipation
Pulsed Drain Current
Max.
30
± 20
21
17
168
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
2/12/09
IRF8734PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
85
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
2.9
4.2
1.80
-6.5
–––
–––
–––
–––
–––
20
5.2
2.3
6.9
5.4
9.2
15
1.7
13
16
15
8.0
3175
627
241
–––
–––
3.5
5.1
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 21A
mΩ
V
GS
= 4.5V, I
D
= 17A
e
e
2.35
V
V
DS
= V
GS
, I
D
= 50µA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
1.0
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
100
-100
–––
30
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 17A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 17A
See Figs. 16a &16b
nC
Ω
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 17A
R
G
= 1.8Ω
See Figs. 15a &15b
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
216
17
Units
mJ
A
V
DS
= 16V, V
GS
= 0V
nC
e
Avalanche Characteristics
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
25
3.1
A
168
1.0
30
38
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A, V
DD
= 15V
di/dt = 345A/µs
Ã
e
e
2
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IRF8734PbF
1000
TOP
1000
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
0.1
0.01
2.3V
10
1
2.3V
≤
60µs PULSE WIDTH
0.001
0.1
1
Tj = 25°C
0.1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 21A
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF8734PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 17A
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45 50 55
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
ID, Drain-to-Source Current (A)
100
10
1msec
1
TJ = 25°C
1
T A = 25°C
VGS = 0V
Tj = 150°C
Single Pulse
0.1
0
1
10msec
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8734PbF
25
VGS(th) , Gate Threshold Voltage (V)
2.5
20
ID, Drain Current (A)
2.0
15
1.5
ID = 50µA
10
5
1.0
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
a
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
1
Ri (°C/W)
9.66830
16.3087
20.7805
3.14828
0.169346
11.46293
1.815389
0.005835
τi
(sec)
0.1
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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