PD -
97145
IRF8313PbF
Applications
l
l
HEXFET
®
Power MOSFET
Load Switch
DC/DC Conversion
V
DSS
R
DS(on)
max
Qg
30V 15.5m
:
@V
GS
= 10V 6.0nC
Benefits
l
Low Gate Charge and Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
100% Tested for R
G
l
Lead-Free (Qualified to 260°C Reflow)
l
RoHS Compliant (Halogen Free)
Description
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck
operation
including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes
through
are on page 9
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/5/08
IRF8313PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
12.5
18.6
1.80
-6.0
–––
–––
–––
–––
–––
6.0
1.5
0.9
2.2
1.4
2.9
3.8
2.2
8.3
9.9
8.5
4.2
760
172
87
–––
–––
15.5
21.6
2.35
–––
1.0
150
100
-100
–––
9.0
–––
–––
–––
–––
–––
–––
3.6
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 8.0A
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 9.7A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
μA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 8.0A
e
= 8.0A
e
V
DS
= V
GS
, I
D
= 25μA
See Figs. 17a & 17b
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 8.0A
R
G
= 1.8Ω
See Fig. 15a & 15b
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
46
8.0
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
10
3.1
82
1.0
30
15
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
DD
= 15V
di/dt = 100A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8313PbF
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
0.1
2.3V
≤60μs
PULSE WIDTH
Tj = 25°C
2.3V
0.1
1
10
100
≤60μs
PULSE WIDTH
0.1
0.1
1
Tj = 175°C
10
100
0.01
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
10
TJ = 175°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 9.8A
VGS = 10V
1.5
1
TJ = 25°C
1.0
0.1
VDS = 15V
0.01
1
2
3
4
5
6
≤60μs
PULSE WIDTH
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF8313PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
ID= 8.0A
VDS = 24V
12
VDS = 15V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
8
100
4
10
0.1
1
10
100
0
0
2
4
6
8
10
12
14
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
TJ = 175°C
10
ID, Drain-to-Source Current (A)
100
100μsec
10
1msec
TJ = 25°C
1
10msec
1
TA = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8313PbF
10
2.5
VGS(th), Gate Threshold Voltage (V)
8
ID , Drain Current (A)
2.0
ID = 25μA
1.5
ID = 250μA
6
4
2
1.0
0
25
50
75
100
125
150
175
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
TA, Ambient Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
Ri (°C/W)
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
R
6
R
6
R
7
R
7
R
8
R
8
τ
a
τ
1
τ
2
τ
3
τ
3
τ
4
τ
4
τ
5
τ
5
τ
6
τ
6
τ
7
τ
7
τ
8
τ
8
τι
(sec)
0.000010
0.000030
0.000020
0.001289
0.000340
0.009747
27.798341
0.575346
1
τ
J
R
4
R
4
R
5
R
5
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
0.1396039
0.4048955
0.5273926
1.2084906
1.5779475
7.0394610
18.0102679
33.5929564
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.01
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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