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GS818QV36D-133IT

产品描述Standard SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, BGA-165
产品类别存储    存储   
文件大小700KB,共29页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
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GS818QV36D-133IT概述

Standard SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, BGA-165

GS818QV36D-133IT规格参数

参数名称属性值
厂商名称GSI Technology
零件包装代码BGA
包装说明BGA,
针数165
Reach Compliance Codeunknown
ECCN代码3A991.B.2.B
最长访问时间3 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
内存密度18874368 bit
内存集成电路类型STANDARD SRAM
内存宽度36
功能数量1
端子数量165
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子位置BOTTOM
Base Number Matches1

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Preliminary
GS818QV18/36D-200/167/133
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual DoubleData Rate interface
• Echo Clock outputs track data output drivers
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 36Mb, 72Mb, and 144Mb devices
18Mb
Σ
2x2B2V
SigmaQuad SRAM
133 MHz–200 MHz
2.5 V V
DD
1.8 V and 1.5 V I/O
Bottom View
-200
tKHKH
tKHQV
5.0 ns
2.3 ns
-167
6.0 ns
2.5 ns
-133
7.5 ns
3.0 ns
165-Bump, 13 mm x 15 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
SigmaRAM™ Family Overview
GS818QV18/36 are built in compliance with the SigmaQuad SRAM
pinout standard for Separate I/O synchronous SRAMs. They
are18,874,368-bit (18Mb) SRAMs. These are the first in a family of
wide, very low voltage HSTL I/O SRAMs designed to operate at the
speeds needed to implement economical high performance
networking systems.
SigmaQuad SRAMs are offered in a number of configurations. Some
emulate and enhance other synchronous separate I/O SRAMs. A
higher performance SDR (Single Data Rate) Burst of 2 versionis also
offered. The logical differences between the protocols employed by
these RAMs hinge mainly on various combinations of address
bursting, output data registering, and write cueing. Along with the
Common I/O family of SigmaRAMs, the SigmaQuad family of SRAMs
allows a user to implement the interface protocol best suited to the
task at hand.
input register clock inputs, K and K. K and K are independent single-
ended clock inputs, not differential inputs to a single differential clock
input buffer. The device also allows the user to manipulate the output
register clock inputs quasi independently with the C and C clock
inputs. C and C are also independent single-ended clock inputs, not
differential inputs. If the C clocks are tied high, the K clocks are routed
internally to fire the output registers instead. Each
Σ
2x2B2 igmaQuad
SRAM also supplies Echo Clock outputs, CQ and CQ, that are
synchronized with read data output. When used in a source
synchronous clocking scheme, these Echo Clock outputs can be used
to fire input registers at the data’s destination.
Clocking and Addressing Schemes
A
Σ
2x2B2SigmaQuad SRAM is a synchronous device. It employs two
Because Separate I/O
Σ
2x2B2 RAMs always transfer data in two
packets, A0 is internally set to 0 for the first read or write transfer, and
automatically incremented by 1 for the next transfer. Because the LSB
is tied off internally, the address field of a
Σ
2x2B2 RAM is always one
address pin less than the advertised index depth (e.g., the 1M x 18
has a 512K addressable index).
Rev: 1.01 11/2002
1/29
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
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