Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Infineon(英飞凌) |
Reach Compliance Code | compliant |
配置 | Single |
最大漏极电流 (Abs) (ID) | 42 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 110 W |
表面贴装 | YES |
Base Number Matches | 1 |
AUIRF2905ZSTRL | AUIRF2905ZSTRR | AUIRFR2905ZSTRR | AUIRFR2905ZSTRL | |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
Reach Compliance Code | compliant | compliant | compliant | compliant |
配置 | Single | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | YES | YES | YES | YES |
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