MMBTA64
Darlington Transistor
PNP Silicon
1
BASE
COLLECTOR
3
3
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
-30
-30
-10
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R
θJA
T
J,Tstg
Value
225
1.8
556
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(I C =-100 uAdc, IB =0)
Collector Cufoff Current(V CB =-30Vdc, I E =0)
Emitter Cufoff Current(VEB =-10Vdc, IC =0)
1. FR-5=1.0
I
I
0.75
I
I
0.062 in
_
_
2. Pulse Test: Pulse Width< 300us, Duty Cycle < 2.0%
Symbol
V(BR)CEO
ICBO
IEBO
Min
-30
-
-
Max
-
-0.1
-0.1
Unit
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
MMBTA64
ELECTRICAL CHARACTERISTICS
(Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS
hFE
(I C = -10 mAdc, VCE= -5.0 Vdc)
(IC = -100 mAdc, VCE = -5.0Vdc)
10000
20000
-
-
Collector-Emitter Saturation Voltage
(IC = -100 mAdc, IB = -0.1mAdc)
Base-Emitter On Voltage
(IC = -100 mAdc, VCE = -5.0mAdc)
VCE(sat)
-
-1.5
-2.0
Vdc
Vdc
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = -10 mAdc, VCE=-5.0 Vdc, f=100 MHz)
fT
125
-
MHz
WEITRON
MMBTA64
200
DC CURRENT GAIN : h
FE
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
T
a
=125 C
25 C
V
CE
=-2.0V
-5.0V
-10V
-55 C
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0 -10
-20
-30
-50
-70
-100
-200
-300
COLLECTOR CURRENT : I
C
(mA)
FIG.1 DC Current Gain
-2.0
T
a
=25 C
V,VOLTAGE (VOLTS)
V
CE
,COLLECTOR-EMITTER VOLTAGE
(VOLTS)
-2.0
T
a
=25 C
-1.8
-1.6
I
C
=-10mA -50mA -100mA -175mA -300mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2-0.5 -1 -2 -5 -10-20 -50-100-200-500-1K -5K-10K
-2K
BASE CURRENT : I
B
(uA)
-1.6
-1.2
V
BE(sat)
@I
C
/I
B
=100
V
BE(on)
@V
CE
=-5.0V
-0.8
-0.4
0
-0.3-0.5 -1.0
V
CE(sat)
@I
C
/I
B
=1000
I
C
/I
B
=100
-2 -3 -5
-10
-20 -30 -50 -100 -200-300
COLLECTOR CURRENT : I
C
(mA)
FIG.2 "On" Voltage
10
4.0
3.0
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0
-10 -20
V
CE
=-5.0V
f=100MHz
T
a
=25 C
FIG.3 Collector Saturatiion Region
HIGH FREQUENCY CURRENT
GAIN : h
FE
-50 -100 -200
-500 -1K
COLLECTOR CURRENT : I
C
(mA)
FIG.4 High Frequency Current Gain
WEITRON
MMBTA64
SOT-23 Package Outline Dimensions
Unit:mm
A
T OP V IE W
B
C
E
G
H
D
K
J
L
M
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M
0.076 0.25
WEITRON
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