电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IS61NLP409618B-166M3L

产品描述ZBT SRAM, 4MX18, 3.5ns, CMOS, PBGA165, LFBGA-165
产品类别存储    存储   
文件大小1MB,共39页
制造商Integrated Silicon Solution ( ISSI )
标准
下载文档 详细参数 全文预览

IS61NLP409618B-166M3L概述

ZBT SRAM, 4MX18, 3.5ns, CMOS, PBGA165, LFBGA-165

IS61NLP409618B-166M3L规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码BGA
包装说明LBGA,
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3.5 ns
JESD-30 代码R-PBGA-B165
JESD-609代码e1
长度17 mm
内存密度75497472 bit
内存集成电路类型ZBT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX18
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
座面最大高度1.4 mm
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间10
宽度15 mm
Base Number Matches1

文档预览

下载PDF文档
IS61NLP204836B/IS61NVP/NVVP204836B
IS61NLP409618B/IS61NVP/NVVP409618B
2M x 36 and 4M x 18
72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-
ball PBGA packages
• Power supply:
NLP: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
NVP: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NVVP: V
dd
1.8V (± 5%), V
ddq
1.8V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
ADVANCED INFORMATION
FEBRUARY 2013
DESCRIPTION
The 72 Meg product family features high-speed, low-power
synchronous static RAMs designed to provide a burstable,
high-performance, 'no wait' state, device for networking
and communications applications. They are organized as
2,096,952 words by 36 bits and 4,193,904 words by 18
bits, fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE
is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when
WE
is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-250
2.6
4
250
-200
3.1
5
200
166
3.5
6
166
Units
ns
ns
MHz
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00C
02/20/2013
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1481  1895  149  314  960  55  58  39  42  13 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved