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GS8160ZV36CGT-333

产品描述ZBT SRAM, 512KX36, 4.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
产品类别存储    存储   
文件大小584KB,共22页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准  
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GS8160ZV36CGT-333概述

ZBT SRAM, 512KX36, 4.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100

GS8160ZV36CGT-333规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间4.5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码R-PQFP-G100
JESD-609代码e3
长度20 mm
内存密度18874368 bit
内存集成电路类型ZBT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)2 V
最小供电电压 (Vsup)1.6 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层PURE MATTE TIN
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

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Preliminary
GS8160ZV18/36CT-333/300/250
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
333 MHz–250 MHz
1.8 V V
DD
1.8 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160ZV18/36CT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8160ZV18/36CT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS8160ZV18/36CT is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
-333
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
2.5
3.0
375
435
4.5
4.5
280
335
-300
2.5
3.3
335
390
5.0
5.0
230
270
-250
2.5
4.0
280
330
5.5
5.5
210
240
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.00 9/2004
1/22
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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