Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
BUK451
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-100A
100
3.0
40
175
0.85
MAX.
-100B
100
3.0
40
175
1.1
UNIT
V
A
W
˚C
Ω
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-100A
3.0
3.0
12
40
175
175
MAX.
100
100
30
-100B
3.0
3.0
12
UNIT
V
V
V
A
A
A
W
˚C
˚C
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP.
-
60
MAX.
3.75
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
V
DS
= V
GS
; I
D
= 1 mA
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 ˚C
V
DS
= 100 V; V
GS
= 0 V; T
j
=125 ˚C
V
GS
=
±30
V; V
DS
= 0 V
V
GS
= 10 V;
BUK451-100A
I
D
= 2.5 A
BUK451-100B
MIN.
100
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.75
0.90
MAX.
-
4.0
10
1.0
100
0.85
1.10
UNIT
V
V
µA
mA
nA
Ω
Ω
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
PARAMETER
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 2.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1.3
-
-
-
-
-
-
-
-
-
-
TYP.
1.7
160
45
16
4
15
10
10
3.5
4.5
7.5
MAX.
-
240
60
25
6
25
20
20
-
-
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
Ω;
R
gen
= 50
Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
-
-
I
F
= 3.0 A ; V
GS
= 0 V
I
F
= 3.0 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 30 V
MIN.
-
-
-
-
-
TYP.
-
-
1.1
100
0.25
MAX.
3.0
12
1.4
-
-
UNIT
A
A
V
ns
µC
January 1980
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
D=
0.5
1
0.2
0.1
0.05
0.1
0.02
0
P
D
t
p
D=
t
p
T
t
1E+01
T
0
20
40
60
80 100
Tmb / C
120
140
160
180
0.01
1E-05
1E-03
t/s
1E-01
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID / %
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
Ths / C
120
140
160
180
Normalised Current Derating
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
10
ID / A
BUK4y1-100
VGS / V =
15
10
9
8
A
B
6
8
4
7
6
5
0
0
4
8
12
VDS / V
16
20
2
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
ID / A
BUK451-100
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
ID / A
5
6
7
VGS / V =
8
9
10
15
BUK4y1-100
100
5
A
/
DS
ID
tp =
10 us
100 us
1 ms
B
4
10
RD
S
N
(O
)=
V
3
2
1
DC
10 ms
100 ms
1
0.1
1
10
VDS / V
100
0
0
2
4
VDS / V
6
8
10
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
January 1980
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
10
ID / A
BUK4y1-100
4
VGS(TO) / V
max.
8
Tj / C = 25
typ.
3
min.
2
6
150
4
1
2
0
0
2
4
6
8
VGS / V
10
12
14
0
-60
-20
20
60
Tj / C
100
140
180
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
gfs / S
BUK4y1-100A
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
ID / A
SUB-THRESHOLD CONDUCTION
2
1E-01
1E-02
1.5
1E-03
2%
typ
98 %
1
1E-04
0.5
1E-05
0
0
2
4
ID / A
6
8
1E-06
0
1
2
VGS / V
3
4
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
a
Normalised RDS(ON) = f(Tj)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
C / pF
BUK4y1-100A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
Ciss
100
Coss
-60
-20
20
60
Tj / C
100
140
180
10
0
20
VDS / V
40
Crss
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 2.5 A; V
GS
= 5 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
January 1980
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
15
VGS / V
BUK4y1-100A
10
9
IF / A
BUK4y1-100A
VDS / V = 20
10
80
8
7
6
5
4
Tj / C = 150
25
5
3
2
1
0
0
2
QG / nC
4
6
0
0
0.2
0.4
0.6 0.8
1
VSDS / V
1.2
1.4
1.6
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 3 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
January 1980
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