RM3400A
N-Channel
Enhancement Mode Power MOSFET
Description
The RM3400A uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
●
V
DS
= 30V,I
D
= 5.8A
R
DS(ON)
< 55mΩ @ V
GS
=2.5V
R
DS(ON)
< 42mΩ @ V
GS
=4.5V
R
DS(ON)
< 40mΩ @ V
GS
=10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
●
PWM applications
●
Load switch
●
Power management
Schematic diagram
Marking and pin assignment
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
3400A
Device
RM3400A
Device Package
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
89
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
30
-
33
-
-
1
V
μA
2019-04/15
REV:B
Symbol
Condition
Min
Typ
Max
Unit
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5V, I
D
=4A
V
GS
=4.5V, I
D
=5A
V
GS
=10V, I
D
=5.8A
V
DS
=5V,I
D
=5A
-
0.7
-
-
-
10
-
-
-
-
-
0.9
±100
1.4
nA
V
mΩ
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
41
28
24
-
825
100
78
3.3
4.8
26
4
10
1.6
3.1
-
-
55
42
40
-
-
-
-
-
-
-
-
-
-
-
1.2
5.8
V
DS
=15V,V
GS
=0V,
F=1.0MHz
V
DD
=15V, R
L
=2.7Ω
V
GS
=10V,R
GEN
=3Ω
-
-
-
-
-
-
-
-
V
DS
=15V,I
D
=5.8A,
V
GS
=4.5V
V
GS
=0V,I
S
=5.8A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
? ? ? ?? ? ?
RATING AND CHARACTERISTICS CURVES
(
RM3400A
)
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
I
D
- Drain Current (A）
P
D
Power(W)
.
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
? ? ? ?? ? ?
RATING AND CHARACTERISTICS CURVES
(
RM3400A
)
I
D
- Drain Current (A)
Normalized On-Resistance
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
? ? ? ?? ? ?
RATING AND CHARACTERISTICS CURVES
(
RM3400A
)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
.
Square Wave
Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
? ? ? ?? ? ?
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