电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SF1603GC0G

产品描述Rectifier Diode, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-220AB,
产品类别分立半导体    二极管   
文件大小386KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SF1603GC0G概述

Rectifier Diode, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-220AB,

SF1603GC0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T3
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.975 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流125 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压150 V
最大反向电流10 µA
最大反向恢复时间0.035 µs
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
Base Number Matches1

文档预览

下载PDF文档
creat by art
SF1601G- SF1608G
16.0AMPS. Glass Passivated Super Fast Rectifiers
TO-220AB
Features
High efficiency, low VF
High current capavility
High reliability
High surge current capability
Low power loss
For use in low voltage, high frequency inverter,
free wheeling, and polarity protection
application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Cases: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds 16".,(4.06mm) from case.
Weight: 1.90 grams
Ordering Information(example)
Part No.
Package
Packing
Packing code
C0
Packing code
(Green)
C0G
SF1601G TO-220AB 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJC
T
J
T
STG
SF
SF
SF
SF
SF
SF
SF
SF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
50
100
150
200
300
400
500
600
35
50
70
100
105
150
140
200
16
125
0.975
10
400
35
80
1.5
- 55 to + 150
- 55 to + 150
60
1.3
1.7
210
300
280
400
350
500
420
600
Units
V
V
V
A
A
V
uA
nS
pF
O
@ T
A
=25
@ T
A
=100
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G13

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1041  2369  1307  1467  439  24  1  54  45  27 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved