SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
(uni-directional)
P
PPM
(bi-directional)
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 40 V
1000 W
800 W
100 A
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs
waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
uni-directional
bi-directional
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
1000
800
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 88422
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
UNI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
1CL
1CM
1CN
1CP
1CQ
1CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
(1)
DEVICE TYPE
SMB10J5.0
SMB10J5.0A
SMB10J6.0
SMB10J6.0A
SMB10J6.5
SMB10J6.5A
SMB10J7.0
SMB10J7.0A
SMB10J7.5
SMB10J7.5A
SMB10J8.0
SMB10J8.0A
SMB10J8.5
SMB10J8.5A
SMB10J9.0
SMB10J9.0A
SMB10J10
SMB10J10A
SMB10J11
SMB10J11A
SMB10J12
SMB10J12A
SMB10J13
SMB10J13A
SMB10J14
SMB10J14A
SMB10J15
SMB10J15A
SMB10J16
SMB10J16A
SMB10J17
SMB10J17A
SMB10J18
SMB10J18A
SMB10J20
SMB10J20A
SMB10J22
SMB10J22A
SMB10J24
SMB10J24A
SMB10J26
SMB10J26A
SMB10J28
SMB10J28A
SMB10J30
SMB10J30A
SMB10J33
SMB10J33A
SMB10J36
SMB10J36A
SMB10J40
SMB10J40A
Notes:
(1) Pulse test: t
p
≤
50 ms
MAX.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
1000
1000
1000
1000
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
104.2
108.7
87.7
97.1
81.3
89.3
75.2
83.3
69.9
77.5
66.7
73.5
62.9
69.4
59.2
64.9
53.2
58.8
49.8
54.9
45.5
50.3
42.0
46.5
38.8
43.1
37.2
41.0
34.7
38.5
32.8
36.2
31.1
34.2
27.9
30.9
25.4
28.2
23.3
25.7
21.5
23.8
20.0
22.0
18.7
20.7
16.9
18.8
15.6
17.2
14.0
15.5
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
(4) V
F
= 3.5 V at I
F
= 50 A (uni-directional only)
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88422
Revision: 22-Oct-08
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
MARKING
CODE
1AD
1AE
1AF
1AG
1AH
1AK
1AL
1AM
1AN
1AP
1AQ
1AR
1AS
1AT
1AU
1AV
1AW
1AX
1AY
1AZ
1BD
1BE
1BF
1BG
1BH
1BK
1BL
1BM
1BN
1BP
1BQ
1BR
1BS
1BT
1BU
1BV
1BW
1BX
1BY
1BZ
1CD
1CE
1CF
1CG
1CH
1CK
1CL
1CM
1CN
1CP
1CQ
1CR
BREAKDOWN
VOLTAGE
V
BR (1)
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX.
7.82
7.25
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
AT I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
2000
2000
2000
2000
1000
1000
400
400
200
200
100
100
40
40
20
20
10
10
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
83.3
87.0
70.2
77.7
65.0
71.4
60.2
66.7
55.9
62.0
53.3
58.8
50.3
55.6
47.3
51.9
42.6
47.1
39.8
44.0
36.4
40.2
33.6
37.2
31.0
34.5
29.7
32.8
27.8
30.8
26.2
29.0
24.8
27.4
22.3
24.7
20.3
22.5
18.6
20.6
17.2
19.0
16.0
17.6
15.0
16.5
13.6
15.0
12.4
13.8
11.2
12.4
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
DEVICE TYPE
SMB8J5.0C
SMB8J5.0CA
SMB8J6.0C
SMB8J6.0CA
SMB8J6.5C
SMB8J6.5CA
SMB8J7.0C
SMB8J7.0CA
SMB8J7.5C
SMB8J7.5CA
SMB8J8.0C
SMB8J8.0CA
SMB8J8.5C
SMB8J8.5CA
SMB8J9.0C
SMB8J9.0CA
SMB8J10C
SMB8J10CA
SMB8J11C
SMB8J11CA
SMB8J12C
SMB8J12CA
SMB8J13C
SMB8J13CA
SMB8J14C
SMB8J14CA
SMB8J15C
SMB8J15CA
SMB8J16C
SMB8J16CA
SMB8J17C
SMB8J17CA
SMB8J18C
SMB8J18CA
SMB8J20C
SMB8J20CA
SMB8J22C
SMB8J22CA
SMB8J24C
SMB8J24CA
SMB8J26C
SMB8J26CA
SMB8J28C
SMB8J28CA
SMB8J30C
SMB8J30CA
SMB8J33C
SMB8J33CA
SMB8J36C
SMB8J36CA
SMB8J40C
SMB8J40CA
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number: 88422
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
72
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMB10J5.0A-E3/52
SMB10J5.0A-E3/5B
SMB10J5.0AHE3/52
(1)
SMB10J5.0AHE3/5B
(1)
UNIT WEIGHT (g)
0.106
0.106
0.106
0.106
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
10
SMB10J5.0 -
SMB10J40A
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
SMB8J5.0C -
SMB8J40CA
100
µs
1.0 ms
10 ms
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
10 000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
25
V
R
, Measured at
Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
200
Bi-Directional
0
0
25
50
75
100
125
150
175
200
10
1
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88422
Revision: 22-Oct-08
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
100
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
8.3
ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.01
0.1
1
10
100
1000
10
1
10
100
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
0.085 (2.159)
MAX.
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 88422
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
