SM5S Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
Stand-off Voltage
10 to 36V
Peak Pulse Power
3600W (10/1000µs)
2800W (10/10,000µs)
0.116(3.0)
0.093(2.4)
ed*
nt
ate
P
0.413(10.5)
0.374(9.5)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
0.366(9.3)
0.343(8.7)
0.150(3.8)
0.126(3.2)
LEAD 1
0.197(5.0)
0.185(4.7)
0.138(3.5)
0.098(2.5)
0.606(15.4)
0.583(14.8)
*
Patent #’s:
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
0.016 (0.4) Min.
4,980,315
5,166,769
5,278,095
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passivation
and patented PAR
®
construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at T
J
= 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Mechanical Data
Case:
Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals:
Plated, solderable per MIL-STD-750, Method 2026
Polarity:
Heatsink is anode
Mounting Position:
Any
Weight:
0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
Steady state power dissipation
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse derated above T
A
= 25°C
Symbol
P
PPM
P
D
I
PPM
I
FSM
R
θJC
T
J
, T
STG
Value
3600
2800
5.0
See Table 1
500
1.0
–55 to +175
Unit
W
W
A
A
°C/W
°C
Document Number 88382
08-Oct-02
www.vishay.com
1
SM5S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Device Type
Breakdown Voltage
V
(BR)
(V)
Min.
SM5S10
SM5S10A
SM5S11
SM5S11A
SM5S12
SM5S12A
SM5S13
SM5S13A
SM5S14
SM5S14A
SM5S15
SM5S15A
SM5S16
SM5S16A
SM5S17
SM5S17A
SM5S18
SM5S18A
SM5S20
SM5S20A
SM5S22
SM5S22A
SM5S24
SM5S24A
SM5S26
SM5S26A
SM5S28
SM5S28A
SM5S30
SM5S30A
SM5S33
SM5S33A
SM5S36
SM5S36A
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
Max.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
Test Current
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
V
WM
(V)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum Max. Peak Maximum
Reverse
Pulse
Clamping
Leakage
Current
Voltage at
at V
WM
at 10/1000µs
I
PPM
o
Tc = 175 C Waveform
V
C
I
D
(µA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
191
212
179
198
164
181
151
167
140
155
134
148
125
138
118
130
112
123
101
111
91
101
84
93
77
86
72
79
67
74
61
68
56
62
(V)
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Note:
For all types maximum V
F
= 2.0V at I
F
= 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com
2
Document Number 88382
08-Oct-02
SM5S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Power Derating Curve
8.0
3,000
Load Dump Power Characteristics
(10ms Exponential Waveform)
2,500
Power Dissipation (W)
6.0
Load Dump Power (W)
2,000
1,500
1,000
4.0
2.0
500
0
0
50
100
150
200
0
25
50
75
100
125
150
175
Case Temperature (°C)
Case Temperature (°C)
Pulse Waveform
150
T
A
= 25°C
Pulse width (t
d
) is defined as
the point where the peak
current decays to 50% of I
PP
10,000
Reverse Power Capability
Input Peak Pulse Current %
t
r
= 10µs
100
Peak Value I
PP
50
Half Value –
I
PP
2
0
0
t
d
10
20
30
40
Reverse Surge Power (W)
1,000
10
100
Time, ms (t)
Pulse Width (ms) – 1/2 I
PP
Exponential Waveform
Typical Transient Thermal Impedance
100
Transient Thermal Impedance (°C/W)
R
ΘJA
10
1
R
ΘJC
0.1
0.01
0.01
0.1
1
10
100
t – Pulse Width (sec.)
Document Number 88382
08-Oct-02
www.vishay.com
3
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