RED
1.
2.
2.1
2.2
Item No.: 194272
This specification applies to AlInGaP / GaAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
Epitaxy AlInGaP
235
110
250
n-Substrate GaAs
235
n-Electrode
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 20 mA
V
R
= 5 V
min
typ
2,10
max
2,40
10
Unit
V
µA
mcd
nm
Luminous intensity *
I
V
I
F
= 10 mA
11,0
dom. wavelength
I
F
= 20 mA
640
λ
D
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
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