INFRA-RED
1.
2.
2.1
2.2
Item No.: 137141 H
This specification applies to GaAlAs / GaAlAs Chips (substrate removed)
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
n-Electrode
n-Epitaxy GaAlAs
325
120
150
typ.
Active Layer
p-Epitaxy GaAlAs
p-Electrode
325
Wire bond contacts can also have a spider shape
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse voltage
output Power *
Switching time
Symbol
V
F
V
R
Φ
e
t
r
, t
f
Conditions
I
F
= 20 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
min
5
1,6
typ
1,80
2,0
40
710
max
2,10
Unit
V
V
mW
ns
nm
Peak wavelength
λ
P
I
F
= 20 mA
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
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