SMBJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
600W, 180V - 440V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 2)
Maximum instantaneous forward voltage at 50 A for
Unidirectional only
Operating junction temperature range
Storage temperature range
Note 2: For V
WM
≤250V
only
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
VALUE
600
5
100
5
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for Bipolar Applications
1. For bidirectional use CA suffix
2. Electrical characteristics apply in both directions
ORDERING INFORMATION
PART NO.
SMBJxxxx
(Note 1)
PACKING CODE
R5
R4
M4
G
PACKING CODE
SUFFIX
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note 1: "xxxx" defines voltage from 180V (SMBJ180A) to 440V (SMBJ440A)
EXAMPLE
EXAMPLE
PART NO.
SMBJ200A R5G
PART NO.
SMBJ200A
PACKING CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
Version: E1602
SMBJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
125
P
PPM
, PEAK PULSE POWER, KW
Non-repetitive
pulse waveform
shown in fig.3
10
100
75
50
1
25
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
IFSM, PEAK FORWARD SURGE CURRENT (A)
100
8.3ms single half sine wave
For V
WM
≤
250V only
tr=10μs
Peak value
I
PPM
Half value-I
PPM
/2
10/1000μs waveform
as defined by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1000
Measured at
zero bias
100
f=1.0MHz
Vsig=50mVp-p
10
1
Measured at
V
WM
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Version: E1602
SMBJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
Device
Device
Marking
Code
Breakdown
Voltage
(Note 1)
V
BR
V
Min.
201
224
246
279
335
391
447
492
Max.
222
247
272
309
371
432
494
543
Test
Current
I
T
mA
1
1
1
1
1
1
1
1
Working
Peak
Reverse
Voltage
V
WM
V
180
200
220
250
300
350
400
440
Maximum
Reverse
Leakage
@ V
WM
I
R
μA
1
1
1
1
1
1
1
1
Maximum
Peak
Pulse
Current
I
PPM
A
(Note 2)
2.1
1.2
1.1
1.0
0.8
0.7
0.6
0.6
Maximum
Clamping
Voltage
@ I
PPM
Vc
V
292
324
356
405
486
567
648
713
UNI
SMBJ180A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
BI
SMBJ180CA
SMBJ200CA
SMBJ220CA
SMBJ250CA
SMBJ300CA
SMBJ350CA
SMBJ400CA
SMBJ440CA
UNI
PT
PV
PX
PZ
QE
QG
QK
QM
BI
PTC
PVC
PXC
PZC
QEC
QGC
QKC
QMC
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
Version: E1602
SMBJ HV SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.95
4.06
3.30
2.13
0.76
5.21
-
0.152
Max
2.20
4.60
3.94
2.68
1.52
5.59
0.203
0.305
Unit (inch)
Min
0.077
0.160
0.130
0.084
0.030
0.205
-
0.006
Max
0.087
0.181
0.155
0.106
0.060
0.220
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Note: Cathode band for uni-directional products only
Version: E1602
SMBJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: E1602
stm32/stm8
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