19-4402; Rev 1; 5/09
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
General Description
The MAX19996A single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.8dB noise figure for 2000MHz to 3900MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli-
cations. With an ultra-wide LO frequency range of
2100MHz to 4000MHz, the MAX19996A can be used in
either low-side or high-side LO injection architectures
for virtually all 2.5GHz and 3.5GHz applications. For a
2.5GHz variant tuned specifically for low-side injection,
refer to the MAX19996 data sheet.
In addition to offering excellent linearity and noise
performance, the MAX19996A also yields a high level
of component integration. This device includes a dou-
ble-balanced passive mixer core, an IF amplifier, and
an LO buffer. On-chip baluns are also integrated to
allow for single-ended RF and LO inputs. The
MAX19996A requires a nominal LO drive of 0dBm,
and supply current is typically 230mA at V
CC
= 5.0V,
or 150mA at V
CC
= 3.3V.
The MAX19996A is pin compatible with the MAX19996
2000MHz to 3000MHz mixer. The device is also pin
similar with the MAX9984/MAX9986/MAX9986A
400MHz to 1000MHz mixers and the MAX9993/
MAX9994/MAX9996 1700MHz to 2200MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used for
multiple frequency bands.
The MAX19996A is available in a compact 5mm x 5mm,
20-pin thin QFN with an exposed pad. Electrical perfor-
mance is guaranteed over the extended -40°C to
+85°C temperature range.
Features
♦
2000MHz to 3900MHz RF Frequency Range
♦
2100MHz to 4000MHz LO Frequency Range
♦
50MHz to 500MHz IF Frequency Range
♦
8.7dB Conversion Gain
♦
9.8dB Noise Figure
♦
+24.5dBm Typical Input IP3
♦
11dBm Typical Input 1dB Compression Point
♦
67dBc Typical 2LO-2RF Spurious Rejection at
P
RF
= -10dBm
♦
Integrated LO Buffer
♦
Integrated RF and LO Baluns for Single-Ended
Inputs
♦
Low -3dBm to +3dBm LO Drive
♦
Pin Compatible with the MAX19996 2000MHz to
3000MHz Mixer
♦
Pin Similar with the MAX9993/MAX9994/MAX9996
Series of 1700MHz to 2200MHz Mixers and the
MAX9984/MAX9986/MAX9986A Series of 400MHz
to 1000MHz Mixers
♦
Single 5.0V or 3.3V Supply
♦
External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19996A
Applications
2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
3.5GHz WiMAX and LTE Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
PART
MAX19996AETP+
MAX19996AETP+T
Ordering Information
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EP
= Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
Pin Configuration/Functional Diagram appears at end of
data sheet.
1
________________________________________________________________
Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
MAX19996A
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ...........................................................-0.3V to +5.5V
IF+, IF-, LO to GND ....................................-0.3V to (V
CC
+ 0.3V)
RF, LO Input Power ........................................................+12dBm
RF, LO Current (RF and LO is DC shorted to GND
through a balun)...............................................................50mA
Continuous Power Dissipation (Note 1) ...............................5.0W
θ
JA
(Notes 2, 3)..............................................................+38°C/W
θ
JC
(Notes 1, 3)................................................................13°C/W
Operating Case Temperature
Range (Note 4).........................................T
C
= -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, no input AC signals. T
C
= -40°C to +85°C, unless otherwise noted. Typical values
are at V
CC
= 5.0V, T
C
= +25°C, all parameters are production tested.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
CONDITIONS
MIN
4.75
TYP
5.0
230
MAX
5.25
245
UNITS
V
mA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= 3.0V to 3.6V, no input AC signals. T
C
= -40°C to +85°C, unless otherwise noted. Typical values are
at V
CC
= 3.3V, T
C
= +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
SYMBOL
V
CC
I
CC
Total supply current, V
CC
= 3.3V
CONDITIONS
MIN
3.0
TYP
3.3
150
MAX
3.6
UNITS
V
mA
2
_______________________________________________________________________________________
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
MAX19996A
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency Range
SYMBOL
CONDITIONS
Typical Application Circuit
with C1 = 8.2pF,
see Table 1 for details (Note 5)
f
RF
Typical Application Circuit
with C1 = 1.5pF,
see Table 1 for details (Note 5)
(Note 5)
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the
Typical
Application Circuit,
IF matching
components affect the IF frequency range
(Note 5)
Using Mini-Circuits TC4-1W-7A 4:1
transformer as defined in the
Typical
Application Circuit,
IF matching
components affect the IF frequency range
(Note 5)
MIN
2000
3000
2100
TYP
MAX
3000
MHz
3900
4000
MHz
UNITS
LO Frequency
f
LO
100
500
IF Frequency
f
IF
MHz
50
250
LO Drive
P
LO
-3
0
+3
dBm
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
RF
= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION
(Typical
Application Circuit
with tuning elements outlined in
Table 1,
V
CC
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω
sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
IF
= 300MHz, f
LO
= 2600MHz to 3200MHz, f
RF
< f
LO
,
T
C
= -40°C to +85°C. Typical values are for T
C
= +25°C, V
CC
= 5.0V, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2900MHz, f
IF
= 300MHz.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
Small-Signal Conversion Gain
SYMBOL
CONDITIONS
f
RF
= 2300MHz to 2900MHz, T
C
= +25°C
(Note 7)
f
RF
= 2305MHz to 2360MHz
f
RF
= 2500MHz to 2570MHz
Gain Variation vs. Frequency
ΔG
C
f
RF
= 2570MHz to 2620MHz
f
RF
= 2500MHz to 2690MHz
f
RF
= 2700MHz to 2900MHz
Conversion Gain Temperature
Coefficient
Single Sideband Noise Figure
Noise Figure Temperature
Coefficient
TC
CG
T
C
= -40°C to +85°C
No blockers present
NF
SSB
f
RF
= 2600MHz, f
IF
= 300MHz, P
LO
= 0dBm,
V
CC
= +5.0V, T
C
= +25°C, no blockers present
f
RF
= 2300MHz to 2900MHz, single sideband,
no blockers present, T
C
= -40°C to +85°C
+8dBm blocker tone applied to RF port,
f
RF
= 2600MHz, f
LO
= 2900MHz,
f
BLOCKER
= 2400MHz, P
LO
= 0dBm,
V
CC
= +5.0V, T
C
= +25°C (Note 8)
MIN
7.9
TYP
8.7
0.1
0.1
0.1
0.2
0.3
-0.012
9.8
9.8
0.018
12
10.5
dB
dB/°C
dB
MAX
9.2
UNITS
dB
TC
NF
dB/°C
Noise Figure Under Blocking
NF
B
18
22
dB
_______________________________________________________________________________________
3
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
MAX19996A
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
RF
= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION (continued)
(Typical
Application Circuit
with tuning elements outlined in
Table 1,
V
CC
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω
sources, P
LO
= -3dBm to +3dBm, P
RF
= -5dBm, f
RF
= 2300MHz to 2900MHz, f
IF
= 300MHz, f
LO
= 2600MHz to 3200MHz, f
RF
< f
LO
,
T
C
= -40°C to +85°C. Typical values are for T
C
= +25°C, V
CC
= 5.0V, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2900MHz, f
IF
= 300MHz.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
Input 1dB Compression Point
Third-Order Input Intercept Point
IIP3 Variation with T
C
2LO-2RF Spur Rejection
3LO-3RF Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
2x2
3x3
RL
RF
RL
LO
Z
IF
SYMBOL
IP
1dB
IIP3
CONDITIONS
T
C
= +25°C (Note 9)
f
RF
= 2600MHz T
C
= +25°C (Notes 7, 9)
f
RF1
- f
RF2
= 1MHz, P
RF1
= P
RF2
= -5dBm,
T
C
= +25°C (Note 7)
f
RF
= 2300MHz to 2900MHz, f
RF1
- f
RF2
= 1MHz,
P
RF1
= P
RF2
= -5dBm, T
C
= -40°C to +85°C
f
SPUR
= f
LO
- 150MHz
f
SPUR
= f
LO
- 100MHz
P
RF
= -10dBm
P
RF
= -5dBm
P
RF
= -10dBm
P
RF
= -5dBm
60
55
75
65
MIN
9.5
10
22.5
TYP
11
11
24.5
±0.3
67
62
85
75
17.5
19.5
200
MAX
UNITS
dBm
dBm
dB
dBc
dBc
dB
dB
Ω
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the
Typical
Application Circuit;
see the
Typical Operating
Characteristics
for
performance vs. inductor
values
P
LO
= +3dBm (Note 7)
P
LO
= +3dBm
P
LO
= +3dBm
P
LO
= +3dBm (Note 7)
f
IF
= 450MHz,
L1 = L2 =
120nH
f
IF
= 350MHz,
L1 = L2 =
270nH
f
IF
= 300MHz,
L1 = L2 =
390nH
27
25
IF Output Return Loss
RL
IF
25
dB
25
30
-28.6
-29.7
-28.4
-22.8
dB
dBm
dBm
dBm
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
4
_______________________________________________________________________________________
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
RF
= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION
(Typical
Application Circuit
with tuning elements outlined in
Table 1,
RF and LO ports are driven from 50Ω sources. Typical values
are for T
C
= +25°C, V
CC
= 3.3V, P
LO
= 0dBm, f
RF
= 2600MHz, f
LO
= 2900MHz, f
IF
= 300MHz, unless otherwise noted.) (Note 6)
PARAMETER
Small-Signal Conversion Gain
Gain Variation vs. Frequency
Conversion Gain Temperature
Coefficient
Single Sideband Noise Figure
Noise Figure Temperature
Coefficient
Input 1dB Compression Point
Third-Order Input Intercept Point
SYMBOL
G
C
ΔG
C
TC
CG
NF
SSB
TC
NF
IP
1dB
IIP3
f
RF
= 2300MHz to 2900MHz, any 100MHz
band
T
C
= -40°C to +85°C
No blockers present
Single sideband, no blockers present,
T
C
= -40°C to +85°C
(Note 9)
f
RF1
= 2600MHz, f
RF2
= 2601MHz,
P
RF1
= P
RF2
= -5dBm
f
RF1
= 2600MHz, f
RF2
= 2601MHz,
P
RF1
= P
RF2
= -5dBm,
T
C
= -40°C to +85°C
2x2
3x3
RL
RF
RL
LO
Z
IF
f
SPUR
= f
LO
- 150MHz
f
SPUR
= f
LO
- 100MHz
P
RF
= -10dBm
P
RF
= -5dBm
P
RF
= -10dBm
P
RF
= -5dBm
CONDITIONS
MIN
TYP
8.3
0.15
-0.012
9.6
0.018
7.75
19.7
MAX
UNITS
dB
dB
dB/°C
dB
dB/°C
dBm
dBm
MAX19996A
IIP3 Variation with T
C
±0.5
64
59
74
64
17.5
19.5
200
dB
2LO-2RF Spur Rejection
3LO-3RF Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
dBc
dBc
dB
dB
Ω
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the
Typical
Application Circuit;
see the
Typical Operating
Characteristics
for
performance vs. inductor
values
f
IF
= 450MHz,
L1 = L2 =
120nH
f
IF
= 350MHz,
L1 = L2 =
270nH
f
IF
= 300MHz,
L1 = L2 =
390nH
25
IF Output Return Loss
RL
IF
25
dB
25
38
-30
-31
-34
dB
dBm
dBm
dBm
RF-to-IF Isolation
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
f
RF
= 2300MHz to 2900MHz, P
LO
= +3dBm
f
LO
= 2600MHz to 3200MHz, P
LO
= +3dBm
f
LO
= 2600MHz to 3200MHz, P
LO
= +3dBm
f
LO
= 2600MHz to 3200MHz, P
LO
= +3dBm
_______________________________________________________________________________________
5
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