HY23V04000
Description
512KX8 BIT
CMOS MASK ROM
The HY23V04000 high performance read only memory is organized 524,288 x 8 bit (byte mode) and has
an access time of 70/100/120ns. The low power feature allows the battery operation. The large size
of 4M bit memory density is ideal for charactergenerator, data or program memory in micro-processor
application. The HY23V04000 is packaged 32pin DIP or 32 pin SOP.
Key features
• 524,288 X 8bit organiszation
• Single 3.3V power supply operation
• Access Time : 70/100/120ns (Max)
• Standby Current : 50 (Max)
• Operating Current : 60 (Max)
• TTL compatible inputs and outputs
• 3-State outputs for wired-OR expansion
• Programmable CE or OE pin
• Fully static operation
• Package
HY23V04000D : 32pin Plastic DIP(600 mil)
HY23V04000S : 32pin Plastic SOP(500mil)
¡
Pin Description
Pin
A0~A18
Q0~Q7
CEB*
OEB*
VCC
VSS
Function
Address inputs
Data Outputs
Chip Enable input
Output Enable input
Power supply
Ground
* User selectable polarity
• CEB : CE/CEB
• OEB : OE/OEB
Pin Configuration
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32DIP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A18
A17
A14
A13
A8
A9
A11
OEB
A10
CEB
Q7
Q6
Q5
Q4
Q3
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
32SOP
24
23
22
21
20
19
18
17
VCC
A18
A17
A14
A13
A8
A9
A11
OEB
A10
CEB
Q7
Q6
Q5
Q4
Q3
HY23V04000D
HY23V04000S
Rev0 Page 1 of 6
HY23V04000
Block Diagram
A0~A18
ADDRESS
BUFFER
512KX8 BIT
CMOS MASK ROM
X-DECODER
MEMORY ARRAY
4MBIT ROM CELL
X-PREDEC
Y-PREDEC
Y-DECODER
SENSE AMP
CEB
OEB
CONTROL
CIRCUIT
OUTPUT CIRCUIT
Q0~Q7
Rev0 Page 2 of 6
HY23V04000
Absolute Maximum Ratings
Symbol
T
A
T
STG
V
CC
V
OUT
V
IN
Parameter
Ambient Operating Temperature
Storage Temperature
Supply Voltage to Ground Potential
Output Voltage
Input Voltage
Rating
-10 ~ 80
-55 ~ 150
-0.3 ~ 4.5
-0.3~Vcc+0.3
-0.3~Vcc+0.3
512KX8 BIT
CMOS MASK ROM
Unit
O
C
C
O
V
V
V
Stress above those listed under “absolute maximum ratings” may cause permanent damage to the
device. These are stress ratings only. Functional operation of this device at these or any other
conditions above those indicated in the operational sections of this specification is not implied and
exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
0
2.2
-0.3
Typ
3.3
0
Max
3.6
0
Vcc+0.3
0.8
Unit
V
V
V
V
DC Electrical Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
O
C )
Symbol
V
OH
V
OL
I
IL
I
OL
I
CC
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Supply Current
(tRC=100ns)
I
SB1
I
SB2
Standby Current(TTL)
Standby Current(CMOS)
Condition
I
OH
=-0.4mA
I
OL
=2.1mA
Min
2.4
Typ
Max
Unit
V
0.4
10
¡
V
uA
uA
mA
uA
uA
V
IN
=0V to V
CC
¡
V
OUT
=0V to V
CC
CEB=OEB=V
IL
All Output Open
CEB=V
IH
, all Output Open
CEB=V
CC
, all Output Open
10
35
500
50
Rev0 Page 3 of 6
HY23V04000
Capacitance(T
A
=25
O
C , f=1.0MHz)
Symbol
C
I
C
O
Parameter
Input Capacitance
Output Capacitance
Condition
V
IN
= 0V
V
OUT
= 0V
Min
512KX8 BIT
CMOS MASK ROM
Max
10
10
Unit
pF
pF
Capacitance is periodically sampled and not 100% tested
Function Table
CE/CE
L/H
OE/OE
X
H/L
H/L
L/H
Output Disable
High Z
Mode
Standby
Operating
Data
High Z
D
OUT
Active
Power
Standby
AC Characteristics(VCC=3.3
·
0.3V, T
A
=0~70
×
)
Symbol
tRC
tACE
tAA
tAOE
tOH
tHZ
tLZ
Parameter
Min
Read cycle time
Chip enable access time
Address access time
Output enable access time
Output hold time from address change
Output or chip disable to output High-Z
Output or chip Enable to output Low-Z
10
0
20
10
70
70
70
35
0
20
10
Max
Min
100
100
100
50
0
20
Max
Min
120
120
120
60
Max
ns
ns
ns
ns
ns
ns
ns
¡
70ns
100ns
120ns
Unit
AC Test Condition
• Input pulse level
• Input rise and fall time
• Input and output timing level
• Output load
0.4V to 2.4V
10ns
0.8V to 2.0V
1 TTL gate and CL=100pF(70ns product CL=30pF)
Rev0 Page 4 of 6
HY23V04000
Timing Waveforms
READ MODE
512KX8 BIT
CMOS MASK ROM
t
RC
ADD
A0~A18
CEB:ACTIVE LOW
CE/CEB
CE:ACTIVE HIGH
ADD1
ADD2
t
ACE
t
HZ
t
AOE
OEB:ACTIVE LOW
OE/OEB
OE:ACTIVE HIGH
t
AA
t
LZ
Q0~Q7
t
LZ
t
OH
VALID
VALID
Rev0 Page 5 of 6
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