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IS66WV25616ALL-70TLI: 产品描述Pseudo Static RAM, 256KX16, 70ns, CMOS, PDSO44, LEAD FREE, TSOP2-44; 产品类别存储存储; 文件大小497KB，共16页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS66WV25616ALL-70TLI概述

Pseudo Static RAM, 256KX16, 70ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

IS66WV25616ALL-70TLI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2, TSOP44,.46,32
针数	44
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	70 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G44
JESD-609代码	e3
长度	18.415 mm
内存密度	4194304 bit
内存集成电路类型	PSEUDO STATIC RAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端子数量	44
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP44,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	1.8 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.00012 A
最大压摆率	0.025 mA
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	10
宽度	10.16 mm
Base Number Matches	1

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IS66WV25616ALL

IS66WV25616BLL

4Mb LOW VOLTAGE,

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

PRELIMINARY INFORMATION

JANUARY 2008

FEATURES

• High-speed access time: 55ns

• CMOS low power operation

– mW (typical) operating

– µW (typical) CMOS standby

• Single power supply

– 1.7V--1.95V V

(66WV25616ALL)

(70ns)

– 2.5V--3.6V V

(66WV25616BLL) (55ns)

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

bit static RAMs organized as 256K words by 16 bits. It is

fabricated using

ISSI

's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected) or both

and

are HIGH, the device

assumes a standby mode at which the power dissipation

can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory. A

data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS66WV25616ALL/BLL is packaged in the JEDEC

standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP

(TYPE II). The device is aslo available for die sales.

DESCRIPTION

The

ISSI

IS66WV25616ALL/BLL is a high-speed, 4M

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

12/20/07

IS66WV25616ALL-70TLI相似产品对比

	IS66WV25616ALL-70TLI	IS66WV25616BLL-55BLI	IS66WV25616ALL-70BLI
描述	Pseudo Static RAM, 256KX16, 70ns, CMOS, PDSO44, LEAD FREE, TSOP2-44	Pseudo Static RAM, 256KX16, 55ns, CMOS, PBGA48, 8 X 13 MM, LEAD FREE, MINI, BGA-48	Pseudo Static RAM, 256KX16, 70ns, CMOS, PBGA48, 8 X 13 MM, LEAD FREE, MINI, BGA-48
是否无铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2	BGA	BGA
包装说明	TSOP2, TSOP44,.46,32	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30
针数	44	48	48
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	70 ns	55 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48
JESD-609代码	e3	e1	e1
长度	18.415 mm	8 mm	8 mm
内存密度	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	PSEUDO STATIC RAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM
内存宽度	16	16	16
湿度敏感等级	3	3	3
功能数量	1	1	1
端子数量	44	48	48
字数	262144 words	262144 words	262144 words
字数代码	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C
最低工作温度	-40 °C	-	-40 °C
组织	256KX16	256KX16	256KX16
输出特性	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TFBGA	TFBGA
封装等效代码	TSOP44,.46,32	BGA48,6X8,30	BGA48,6X8,30
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260
电源	1.8 V	3/3.3 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.00012 A	0.00013 A	0.00012 A
最大压摆率	0.025 mA	0.028 mA	0.025 mA
最大供电电压 (Vsup)	1.95 V	3.6 V	1.95 V
最小供电电压 (Vsup)	1.7 V	2.5 V	1.7 V
标称供电电压 (Vsup)	1.8 V	3 V	1.8 V
表面贴装	YES	YES	YES
技术	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	GULL WING	BALL	BALL
端子节距	0.8 mm	0.75 mm	0.75 mm
端子位置	DUAL	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	10	10	10
宽度	10.16 mm	6 mm	6 mm
Base Number Matches	1	1	-

IS66WV25616ALL-70TLI

IS66WV25616ALL-70TLI概述

IS66WV25616ALL-70TLI规格参数

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