INTEGRATED CIRCUITS
SA56614-XX
CMOS system reset
Product data
Supersedes data of 2003 Jul 31
2003 Oct 30
Philips
Semiconductors
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
GENERAL DESCRIPTION
The SA56614-XX is a CMOS device designed to generate a reset
signal for a variety of microprocessor and logic systems. Accurate
reset signals are generated during momentary power interruptions,
or whenever power supply voltages sag to intolerable levels.
Several reset threshold versions of the device are available. A
totem-pole output topology is incorporated to provide both current
source and sink capability to the user.
SA56614-XX is available in a 5-lead small outline package
(SOP003).
FEATURES
•
10 V
DC
maximum operating voltage
•
Low operating voltage (0.95 V)
•
Totem pole CMOS output
•
Offered in reset thresholds of
•
Available in 5-lead small outline surface mount package
SIMPLIFIED SYSTEM DIAGRAM
V
DD
2 V
DD
APPLICATIONS
1.85, 2.0, 2.7, 2.8, 2.9, 3.0, 3.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7 V
DC
•
Microcomputer systems
•
Logic systems
•
Battery monitoring systems
•
Back-up power supply circuits
•
Voltage detection circuits
V
DD
SA56614-XX
R
V
OUT
RESET
CPU
V
REF
R
R
1
V
SS
3 V
SS
V
SS
SL01343
Figure 1. Simplified system diagram.
2003 Oct 30
2
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
SA56614-XXGW
NAME
SOT23-5, SOT25, SO5
DESCRIPTION
Plastic small outline package; 5 leads; body width 1.6 mm
VERSION
SOP003
TEMPERATURE
RANGE
–40 to +85
°C
NOTE:
The device has thirteen detection voltage options, indicated by the
XX on the ‘Type number’.
XX
185
20
27
28
29
30
31
42
43
44
45
46
47
DETECT VOLTAGE (Typical)
1.85 V
2.0 V
2.7 V
2.8 V
2.9 V
3.0 V
3.1 V
4.2 V
4.3 V
4.4 V
4.5 V
4.6 V
4.7 V
Marking code
Each device is marked with a four letter code. The first three letters
designate the product. The fourth, represented by an ‘x’, designates
the date tracking code.
Part
SA56614-185GW
SA56614-20GW
SA56614-27GW
SA56614-28GW
SA56614-29GW
SA56614-30GW
SA56614-31GW
SA56614-42GW
SA56614-43GW
SA56614-44GW
SA56614-45GW
SA56614-46GW
SA56614-47GW
Marking
ABWx
AAUx
AAVx
AAWx
AAXx
AAYx
AAZx
ABAx
ABBx
ABCx
ABDx
ABEx
ABFx
PIN CONFIGURATION
PIN DESCRIPTION
PIN
SYMBOL
V
OUT
V
DD
V
SS
n.c.
n.c.
DESCRIPTION
Reset HIGH output.
Positive supply.
Ground. Negative supply.
not connected
not connected
1
2
V
OUT
1
5
n.c.
V
DD
2
SA56614-XX
3
4
V
SS
3
4
n.c.
5
SL01360
Figure 2. Pin configuration.
MAXIMUM RATINGS
SYMBOL
V
DD
V
OUT
I
OUT
T
oper
T
stg
P
Power supply voltage
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation
PARAMETER
MIN.
–
V
SS
– 0.3
–
–40
–40
–
MAX.
12
V
DD
+ 0.3
50
85
125
150
UNIT
V
V
mA
°C
°C
mW
2003 Oct 30
3
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
DC ELECTRICAL CHARACTERISTICS
Characteristics measured with T
amb
= 25
°C,
unless otherwise specified.
SYMBOL
V
S
∆V
S
V
S
/∆T
I
CC
I
OH
I
NDS1
I
NDS2
I
NDS3
I
PDS1
I
PDS2
I
PDS3
PARAMETER
Reset detection threshold
Hysteresis
Threshold voltage temperature
coefficient
Supply current
I
DS
leakage current when OFF
N-channel I
DS
output sink current 1
N-channel I
DS
output sink current 2
(for V
S
> 2.6 V)
N-channel I
DS
output sink current 3
(for V
S
> 3.9 V)
P-channel I
DS
output source current 1
(for V
S
< 4.0 V)
P-channel I
DS
output source current 2
(for 4.0 V < V
S
< 5.7 V)
P-channel I
DS
output source current 3
(for V
S
≥
5.7 V)
V
DD
= 0 V
→
V
S
+ 1.0 V
→
0 V
–40
°C ≤
T
amb
≤
+85
°C
V
DD
= V
S
+ 1.0 V
V
DD
= V
DS
= 10 V
V
DD
= 1.2 V; V
DS
= 0.5 V
V
DS
= 0.5 V; V
DD
= 2.4 V
V
DS
= 0.5 V; V
DD
= 3.6 V
V
DS
= 0.5 V; V
DD
= 4.8 V
V
DS
= 0.5 V; V
DD
= 6.0 V
V
DS
= 0.5 V; V
DD
= 8.4 V
3
Fig. 18
2
Fig. 17
3
Fig. 18
1
Fig. 16
CONDITIONS
TEST
CIRCUIT
MIN.
V
S
– 2%
V
S
×
0.03
–
–
–
–0.23
–1.6
–3.2
0.36
0.46
0.59
TYP.
V
S
V
S
×
0.05
±0.01
0.25
–
0.50
–3.7
–7.00
0.62
0.75
0.96
MAX.
V
S
+ 2%
V
S
×
0.08
–
1.0
0.1
–
–
–
–
–
–
UNIT
V
V
%/°C
µA
µA
mA
mA
mA
mA
mA
mA
2003 Oct 30
4
Philips Semiconductors
Product data
CMOS system reset
SA56614-XX
TYPICAL PERFORMANCE CURVES
0.50
0.45
I
DD
, SUPPLY CURRENT (mA)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
–50
V
DD
= V
S
+ 1.0 V
NORMALIZED TO 25
°C
+0.20
+0.15
+0.10
+0.05
V
S
–0.05
–0.10
–0.15
–0.20
–50
V
CC
FALLING
V
S
NORMALIZED TO 25
°C
V
S
, NORMALIZED THRESHOLD (V)
–25
0
25
50
75
100
125
–25
0
25
50
75
100
125
T
amb
, TEMPERATURE (°C)
T
amb
, TEMPERATURE (°C)
SL01344
SL01345
Figure 3. Supply current versus temperature.
Figure 4. Detection threshold versus temperature.
200
V
S(HYS)
, DETECTION HYSTERESIS (mV)
V
S(HYS)
= V
SH
– V
SL
(V
CC
RISING – V
CC
FALLING)
150
3.0
V
DS
= 0.5 V
I
DS
, OUTPUT FET CURRENT (mA)
2.5
2.0
N-CHANNEL
1.5
100
1.0
P-CHANNEL
0.5
50
0
–50
–25
0
25
50
75
100
125
0
–50
–25
0
25
50
75
100
125
T
amb
, TEMPERATURE (°C)
T
amb
, TEMPERATURE (°C)
SL01346
SL01347
Figure 5. Detection hysteresis versus temperature.
Figure 6. Output FET current versus temperature.
5.0
T
AMB
= 25
°C
TYPICAL CHARACTERISTIC.
DETECTION AND RELEASE
VOLTAGE POINTS DEPEND ON
THE SPECIFIC DEVICE TYPE.
V
S(HYS)
2.0
DETECTION (V
SL
)
RELEASE (V
SH
)
0.6
T
AMB
= 25
°C
0.5
I
DD
, SUPPLY CURRENT (
µ
A)
V
OUT
, OUTPUT VOLTAGE (V)
4.0
0.4
3.0
0.3
0.2
1.0
0.1
0
0
1.0
2 .0
3.0
4.0
5.0
6.0
V
DD
, SUPPLY VOLTAGE (V)
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
DD
, SUPPLY VOLTAGE (V)
SL01348
SL01349
Figure 7. Output voltage versus supply voltage.
Figure 8. Supply current versus supply voltage.
2003 Oct 30
5
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