NTST20100CT,
NTSB20100CT-1G,
NTSJ20100CTG,
NTSB20100CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.50 V at I
F
= 5 A
Features
1
2, 4
3
http://onsemi.com
PIN CONNECTIONS
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Pb−Free and Halide−Free Packages are Available
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
4
12
3
I2PAK
CASE 418D
STYLE 3
Typical Applications
•
Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
1
2
TO−220FP
CASE 221AH
3
D2PAK
CASE 418B
•
Case: Epoxy, Molded
•
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•
Finish: All External Surfaces Corrosion Resistant and Terminal
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 2
1
Publication Order Number:
NTST20100CT/D
NTST20100CT, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C)
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 125°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Per device
Per diode
Per device
Per diode
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Value
100
Unit
V
20
10
40
20
150
−40
to +150
−40
to +150
10,000
A
I
FRM
A
I
FSM
T
J
T
stg
dv/dt
A
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
NTST20100CTG,
NTSB20100CT−1G
2.5
70
NTSB20100CTG
1.5
46.9
NTSJ20100CTG
4.49
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
I
R
Symbol
v
F
Typ
0.55
0.65
0.50
0.58
17
5.3
−
12
Max
−
0.83
−
0.68
−
−
800
25
mA
mA
mA
mA
Unit
V
http://onsemi.com
2
NTST20100CT, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
TYPICAL CHARACTERISITICS
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
100
T
A
= 150°C
I R , REVERSE CURRENT (mA)
T
A
= 25°C
10
T
A
= 125°C
100
T
A
= 150°C
T
A
= 125°C
10
1.0
0.1
T
A
= 25°C
1.0
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
30
50
70
40
60
80
V
R
, REVERSE VOLTAGE (VOLTS)
90
100
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
10000
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
R
qJC
= 1.3°C/W
dc
15
1000
10
SQUARE WAVE
100
5
10
0.1
0
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
dc
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
SQUARE WAVE
R
qJC
= 1.3°C/W
20
18
16
14
12
10
8
6
4
2
0
0
4
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
I
PK
/I
AV
= 20
SQUARE
WAVE
dc
T
A
= 150°C
8
12
16
20
24
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
NTST20100CT, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
TYPICAL CHARACTERISITICS
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
Single Pulse
0.01
0.000001
0.00001
Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST20100CT and NTSB20100CT−1G
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
1
20%
10%
5%
2%
1%
Single Pulse
0.1
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ20100CTG
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
0.01
0.000001
Figure 9. Typical Transient Thermal Response for NTSB20100CTG
http://onsemi.com
4
NTST20100CT, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
ORDERING INFORMATION
Device
NTST20100CTG
NTST20100CTH
(In Development)
NTSB20100CT−1G
NTSJ20100CTG
NTSB20100CTG
NTSB20100CTT4G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Halide−Free)
I
2
PAK
(Pb−Free)
TO−220FP
(Halide−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
MARKING DIAGRAMS
AY WW
TS2100Cx
AKA
AY WW
TS20100CG
AKA
AY WW
TS20100CG
AKA
AY WW
TS20100CG
AKA
TO−220AB
TO−220FP
A
Y
WW
AKA
x
G
H
I
2
PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
D
2
PAK
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
