SKiiP 10 NAB 06
Absolute Maximum Ratings
Symbol
Inverter
V
CES
V
GES
I
C
I
CM
I
F
= –I
C
I
FM
= –I
CM
Conditions
1)
Values
600
± 20
11 / 8
22 / 16
20 / 15
40 / 30
800
12
370
680
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A
2
s
°C
°C
V
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
MiniSKiiP 1
SEMIKRON integrated
intelligent Power
SKiiP 10 NAB 06
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M1
Bridge Rectifier
V
RRM
I
D
T
heatsink
= 80 °C
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
I
FSM
2
t
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
I
T
j
T
stg
V
isol
AC, 1 min.
Characteristics
Symbol
Conditions
1)
IGBT - Inverter & Chopper
I
C
= 5 A
T
j
= 25 (125)
°C
V
CEsat
V
CC
= 300 V; V
GE
= ± 15 V
t
d(on)
I
C
= 5 A; T
j
= 125
°C
t
r
R
gon
= R
goff
= 200
Ω
t
d(off)
inductive load
t
f
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
per IGBT
R
thjh
Diode
2)
- Inverter & Chopper
V
F
= V
EC
I
F
= 10 A T
j
= 25 (125)
°C
T
j
= 125 °C
V
TO
T
j
= 125 °C
r
T
I
F
= 10 A, V
R
= – 300 V
I
RRM
di
F
/dt = – 200 A/µs
Q
rr
V
GE
= 0 V, T
j
= 125 °C
E
off
per diode
R
thjh
Diode - Rectifier
V
F
I
F
= 25 A, T
j
= 25 °C
per diode
R
thjh
Temperature Sensor
T = 25 / 100 °C
R
TS
Mechanical Data
case to heatsink, SI Units
M
1
Case
mechanical outline see page
B 16 – 6
2
min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
max.
Units
V
2,1(2,2) 2,7(2,8)
ns
90
45
ns
110
55
ns
400
270
ns
750
500
mJ
–
0,6
nF
–
0,29
K/W
3,0
–
V
1,45(1,4) 1,7(1,7)
V
0,9
0,85
mΩ
80
55
A
–
13
µC
–
1,5
mJ
–
0,45
K/W
2,7
–
1,2
–
1000 / 1670
–
M1
2,5
–
2,6
V
K/W
Ω
Nm
UL recognized file no. E63532
•
•
specification of temperature
sensor see part A
common characteristics see
page B16–3
Options
•
also available with single phase
rectifier (called 10 NEB 06)
•
also available with faster IGBTs
(type ... 063), data sheet on
request
1)
2)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
© by SEMIKRON
0698
B 16 – 19
Fig. 1 Typ. output characteristic, t
p
= 80
µs;
25 °C
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
G
= 200
Ω
Fig. 2 Typ. output characteristic, t
p
= 80
µs;
125 °C
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 5 A
Fig. 3 Turn-on /-off energy = f (I
C
)
I
Cpuls
= 5 A
Fig. 4 Turn-on /-off energy = f (R
G
)
V
GE
= 0 V
f = 1 MHz
Fig. 5 Typ. gate charge characteristic
B 16 – 20
Fig. 6 Typ. capacitances vs. V
CE
0698
© by SEMIKRON
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC
1.2
Mini0607
T
j
= 150 °C
V
GE
=
≥
15 V
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Th [°C]
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
T
j
=
≤
150 °C
V
GE
= ± 15 V
T
j
=
≤
150 °C
V
GE
= ± 15 V
t
sc
=
≤
10
µs
L
ext
< 25 nH
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
© by SEMIKRON
Fig. 12 Forward characteristic of the input bridge diode
0698
B 16 – 3
MiniSKiiP 1
SKiiP 10 NAB 06
SKiiP 11 NAB 06
Circuit
Case M1
Layout and connections for the
customer’s printed circuit board
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