SRAM Module, 16KX16, 30ns, CMOS
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Cypress(赛普拉斯) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 30 ns |
| 其他特性 | AUTOMATIC POWER-DOWN |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDMA-T36 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 36 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX16 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIP |
| 封装等效代码 | DIP36,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) |
| 最大待机电流 | 0.08 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.33 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| CYM1611HV-30M | CYM1611LHV-35M | CYM1611LHV-30M | CYM1611HV-25M | CYM1611HV-35M | CYM1611HV-45M | CYM1611LHV-45M | CYM1611HV-15M | CYM1611LHV-25M | CYM1611HV-20M | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 16KX16, 30ns, CMOS | SRAM Module, 16KX16, 35ns, CMOS | SRAM Module, 16KX16, 30ns, CMOS | SRAM Module, 16KX16, 25ns, CMOS | SRAM Module, 16KX16, 35ns, CMOS | SRAM Module, 16KX16, 45ns, CMOS | SRAM Module, 16KX16, 45ns, CMOS | SRAM Module, 16KX16, 15ns, CMOS | SRAM Module, 16KX16, 25ns, CMOS | SRAM Module, 16KX16, 20ns, CMOS |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | compliant | not_compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 30 ns | 35 ns | 30 ns | 25 ns | 35 ns | 45 ns | 45 ns | 15 ns | 25 ns | 20 ns |
| 其他特性 | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 | R-XDMA-T36 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 36 | 36 | 36 | 36 | 36 | 36 | 36 | 36 | 36 | 36 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 | 16KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 | DIP36,.1 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) |
| 最大待机电流 | 0.08 A | 0.004 A | 0.004 A | 0.08 A | 0.08 A | 0.08 A | 0.004 A | 0.25 A | 0.004 A | 0.25 A |
| 最小待机电流 | 4.5 V | 2 V | 2 V | 4.5 V | 4.5 V | 4.5 V | 2 V | 4.5 V | 2 V | 4.5 V |
| 最大压摆率 | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA | 0.55 mA | 0.33 mA | 0.55 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | Cypress(赛普拉斯) | Cypress(赛普拉斯) | - | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) |
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