MDD172-08N1
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 800 V
=
=
190 A
0.96 V
Phase leg
Part number
MDD172-08N1
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y4
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDD172-08N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
900
V
800
1
20
1.07
1.22
0.96
1.16
190
300
0.80
0.8
V
mA
mA
V
V
V
V
A
A
V
mΩ
K/W
600
6.60
7.13
5.61
6.06
W
kA
kA
kA
kA
V
R
= 800 V
V
R
= 800 V
I
F
= 150 A
I
F
= 300 A
I
F
= 150 A
I
F
= 300 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.21 K/W
0.08
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
238
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
217.8 kA²s
211.5 kA²s
157.4 kA²s
152.8 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDD172-08N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y4
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
150
2.25
4.5
14.0
16.0
10.0
16.0
3600
3000
2.75
5.5
Date Code (DC)
+
Production
Index (PI)
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDD172-08N1
Marking on Product
MDD172-08N1
Delivery Mode
Box
Quantity
6
Code No.
429694
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.8
0.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDD172-08N1
Outlines Y4
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
MDD172-08N1
Rectifier
8000
10
6
400
50 Hz, 80%V
RRM
6000
V
R
= 0 V
300
DC
180° sin.
120° rect.
60° rect.
30° rect.
I
FSM
4000
I
2
dt
T
VJ
= 45°C
10
5
T
VJ
= 45°C
I
FAVM
200
[s]
2000
[A
2
s]
T
VJ
= 150°C
T
VJ
= 150°C
[A]
100
0
10
-3
10
4
10
-2
10
-1
10
0
10
1
1
2
4
6
8 10
0
0
50
100
150
200
t [s]
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
400
t [s]
Fig. 2
•I
2
dt versus time (1-10 ms)
I
T
C
[°C]
Fig. 2a Maximum forward current
at case temperature
R
thJA
[K/W]
0.4
0.5
300
0.6
0.8
1.0
1.2
1.5
DC
180° sin.
120° rect.
60° rect.
30° rect.
2.0
P
T
200
[W]
100
0
0
50
100
150
200
250
300
0
50
100
150
200
T
FAVM
[A]
T
A
[°C]
Fig. 3 Power dissipation vs. forward current and ambient temperature (per diode)
1000
R
thJA
[K/W]
0.08
800
0.10
R
L
0.15
0.20
600
P
T
400
0.30
0.40
0.50
0.70
Circuit
B2
2x MDD172
[W]
200
R = resistive load
L = inductive load
0
0
100
200
300
400
0
50
100
150
200
T
DAVM
[A]
T
A
[°C]
Fig. 4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
© 2019 IXYS all rights reserved
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