MDD 95
Diode Modules
I
FRMS
= 2x 180 A
I
FAVM
= 2x 120 A
V
RRM
= 800-2200 V
V
RSM
V
900
1300
1500
1700
1900
2100
2300
V
RRM
V
800
1200
1400
1600
1800
2000
2200
Type
3
1
2
MDD 95-08N1 B
MDD 95-12N1 B
MDD 95-14N1 B
MDD 95-16N1 B
MDD 95-18N1 B
MDD 95-20N1 B
MDD 95-22N1 B
TO-240 AA
2
1
3
Symbol
I
FRMS
I
FAVM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 105°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
Maximum Ratings
180
A
120
A
2800
3300
2500
2750
39
45
31
31
200
000
200
300
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
V~
V~
Features
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
q
q
q
q
q
òi
2
dt
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
V
F
V
T0
r
T
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
-40...+150
150
-40...+125
3000
3600
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
q
q
q
q
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 300 A; T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
T
VJ
= 125°C; I
F
= 50 A, -di/dt = 6 A/µs
per diode; DC current
per module
per diode; DC current
per module
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
90
g
Characteristic Values
15 mA
1.43
0.75
1.95
170
45
0.26
0.13
0.46
0.23
12.7
9.6
50
V
V
mΩ
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
q
q
q
q
Dimensions in mm (1 mm = 0.0394")
other values
see Fig. 6/7
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 1999 IXYS All rights reserved
1-3
MDD 95
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2
∫i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 1999 IXYS All rights reserved
2-3
MDD 95
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.26
0.28
0.30
0.34
0.38
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.013
0.072
0.175
t
i
(s)
0.0012
0.047
0.394
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.46
0.48
0.50
0.54
0.58
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.013
0.072
0.175
0.2
t
i
(s)
0.0012
0.047
0.394
1.32
© 1999 IXYS All rights reserved
3-3
嵌入式系统
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