MDD95-12N1B
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 1200 V
=
=
120 A
1.13 V
Phase leg
Part number
MDD95-12N1B
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MDD95-12N1B
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
200
15
1.20
1.43
1.13
1.46
120
180
0.75
1.95
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
481
2.80
3.03
2.38
2.57
W
kA
kA
kA
kA
V
R
= 1200 V
V
R
= 1200 V
I
F
= 150 A
I
F
= 300 A
I
F
= 150 A
I
F
= 300 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.26 K/W
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
116
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
39.2 kA²s
38.1 kA²s
28.3 kA²s
27.5 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MDD95-12N1B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
76
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
Date Code +
Assembly Line
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix
Ordering
Standard
Ordering Number
MDD95-12N1B
Marking on Product
MDD95-12N1B
Delivery Mode
Box
Quantity
36
Code No.
453145
Similar Part
MDD95-08N1B
MDD95-14N1B
MDD95-16N1B
MDD95-18N1B
Package
TO-240AA
TO-240AA
TO-240AA
TO-240AA
Voltage class
800
1400
1600
1800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.75
0.76
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MDD95-12N1B
Outlines TO-240AA
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
MDD95-12N1B
Rectifier
3000
50 Hz, 80% V
RRM
2500
10
5
V
R
= 0 V
250
200
DC
180° sin
120°
60°
30°
2000
I
FSM
[A]
T
VJ
= 45°C
1500
I
2
t
T
VJ
= 45°C
150
I
FAVM
100
[A
2
s]
1000
T
VJ
= 150°C
500
T
VJ
= 150°C
[A]
50
0
10
-3
10
4
10
-2
10
-1
10
0
10
1
1
2
3
6
8
10
0
0
50
100
150
200
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
200
t [ms]
Fig. 2 I
2
t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
R
thJA
[K/W]
0.4
0.6
150
0.8
1
P
T
100
1.2
1.5
2
DC
180° sin
120°
60°
30°
3
[W]
50
0
0
50
100
150
0
50
100
150
200
I
TAVM
, I
FAVM
[A]
T
A
[°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
800
R
thKA
[K/W]
0.1
0.15
600
R
L
0.2
0.3
0.4
P
tot
400
[W]
0.5
0.6
200
Circuit
B2
2x MDD95
0.7
0
0
50
100
150
200
250
0
50
100
150
200
I
dAVM
[A]
T
A
[°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
© 2016 IXYS all rights reserved
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